Interfacial Failure Characterization of Electronic Packaging Component Using a Multiscale Modelling Approach

Abstract

Interfacial properties of Cu/SiO2 in semiconductor devices has been a challenging study for many years because of its difficulties in experimentally quantifying the critical strength of interface. In this paper, a multi-scale modeling approach is built to characterize the interfacial properties between Cu and SiO2. The Cu and SiO2 are bonded by three types of chemical bonds, which cause three atomistic interfacial structures. The fracture of Cu-O and Cu-Si bonded interfaces occur at the interface, however, the fracture for Cu-OO interface occurs at copper layer near the interface, indicating two different fracture criterions coexist in Cu/SiO2 system.