铁电和准电场效应管的动态特性研究

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-07-31 DOI:10.1109/EDTM.2018.8421493

A.Sai Kumar, M. M. De Souza

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引用次数: 6

摘要

我们推导了具有门扫描频率的拟电场效应管陡亚阈值开关的必要条件。尽管没有双谷能量分布，但在栅极偏置反向扫描期间，在动态条件下表现出低于60 mV/dec切换的串联R-C电路可以表示准电场效应管。

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On the Dynamic characteristics of Ferroelectric and Paraelectric FETs

We derive the necessary conditions for a steep subthreshold switching of a Paraelectric FET with gate scan frequency. Despite an absence of a two-valley energy profile, paraelectric FETs can be represented by a series R-C circuit that exhibit sub-60 mV/dec switching under dynamic conditions during the reverse sweep of the gate bias.

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2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

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