C. Fan, Y. Chiu, Chien Liu, W. Lai, C. Tu, Ming-Huei Lin, Tun-Jen Chang, Chun-Yen Chang, G. Liou, H. Hsu, Cheng-Yu Tang, Chun‐Hu Cheng
{"title":"Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory","authors":"C. Fan, Y. Chiu, Chien Liu, W. Lai, C. Tu, Ming-Huei Lin, Tun-Jen Chang, Chun-Yen Chang, G. Liou, H. Hsu, Cheng-Yu Tang, Chun‐Hu Cheng","doi":"10.1109/EDTM.2018.8421478","DOIUrl":null,"url":null,"abstract":"In this work, we report the paraelectric-ferroelectric transition of the ferroelectric HfZrO with buffered HfNO. Our experimental and simulated results reveal that the buffered HfNO plays a key role in paraelectric-ferroelectric switching and ferroelectric recovery during cycled switching. The transient current pulse measurement was employed to verify the switching mechanism.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM.2018.8421478","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this work, we report the paraelectric-ferroelectric transition of the ferroelectric HfZrO with buffered HfNO. Our experimental and simulated results reveal that the buffered HfNO plays a key role in paraelectric-ferroelectric switching and ferroelectric recovery during cycled switching. The transient current pulse measurement was employed to verify the switching mechanism.