Paraelectric-Ferroelectric Transition in Hafnium-Oxide-Based Ferroelectric Memory

C. Fan, Y. Chiu, Chien Liu, W. Lai, C. Tu, Ming-Huei Lin, Tun-Jen Chang, Chun-Yen Chang, G. Liou, H. Hsu, Cheng-Yu Tang, Chun‐Hu Cheng
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引用次数: 1

Abstract

In this work, we report the paraelectric-ferroelectric transition of the ferroelectric HfZrO with buffered HfNO. Our experimental and simulated results reveal that the buffered HfNO plays a key role in paraelectric-ferroelectric switching and ferroelectric recovery during cycled switching. The transient current pulse measurement was employed to verify the switching mechanism.
氧化铪基铁电存储器中的准电-铁电跃迁
在这项工作中,我们报道了铁电HfZrO与缓冲HfNO的拟电-铁电转变。我们的实验和模拟结果表明,缓冲的HfNO在副电-铁电开关和循环开关中的铁电恢复中起着关键作用。采用瞬态电流脉冲测量法对开关机理进行了验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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