{"title":"非晶铟锌钨氧化物薄膜晶体管的退火效应","authors":"Ruofan Fu, Jianwen Yang, Qun Zhang, Wei-Chiao Chang, Chien-Min Chang, Po-Tsun Liu, H. Shieh","doi":"10.1109/EDTM.2018.8421476","DOIUrl":null,"url":null,"abstract":"Annealing effect on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) was investigated. As the annealing temperature increases from 150 □ to 400 □ for one hour, the IZWO films remain the amorphous state being conducive to the large area uniformity. The field effect mobility of the devices increases as a function of annealing temperature and reaches to 16.2 cm2/V·s at 300 °C, along with the on/off current ratio of and subthreshold swing value of 0.20 V/decade.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors\",\"authors\":\"Ruofan Fu, Jianwen Yang, Qun Zhang, Wei-Chiao Chang, Chien-Min Chang, Po-Tsun Liu, H. Shieh\",\"doi\":\"10.1109/EDTM.2018.8421476\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Annealing effect on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) was investigated. As the annealing temperature increases from 150 □ to 400 □ for one hour, the IZWO films remain the amorphous state being conducive to the large area uniformity. The field effect mobility of the devices increases as a function of annealing temperature and reaches to 16.2 cm2/V·s at 300 °C, along with the on/off current ratio of and subthreshold swing value of 0.20 V/decade.\",\"PeriodicalId\":418495,\"journal\":{\"name\":\"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDTM.2018.8421476\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM.2018.8421476","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors
Annealing effect on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) was investigated. As the annealing temperature increases from 150 □ to 400 □ for one hour, the IZWO films remain the amorphous state being conducive to the large area uniformity. The field effect mobility of the devices increases as a function of annealing temperature and reaches to 16.2 cm2/V·s at 300 °C, along with the on/off current ratio of and subthreshold swing value of 0.20 V/decade.
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