低热预算制备聚ge1 - xsnx薄膜热电发生器

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-07-26 DOI:10.1109/EDTM.2018.8421488

Kouta Takahashi, H. Ikenoue, M. Sakashita, O. Nakatsuka, S. Zaima, M. Kurosawa

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引用次数: 0

摘要

研究了用脉冲激光在水中退火制备的聚ge {1-x}Sn} {x}层的热电(TE)性能。即使对于多晶层，p型和n型聚ge {1-x}Sn} {x}层的功率因数也相对较高，分别为0.37和0.92 mWK−2m−1。在300℃的工艺温度下，首次制备了Ge} {1-x}Sn} {x}基TE发生器。

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Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator

We have investigated thermoelectric (TE) properties of poly-Ge}_{1-x}Sn}_{x} layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK−2m−1 were obtained for p- and n-type poly-Ge}_{1-x}Sn}_{x} layers, respectively. The Ge}_{1-x}Sn}_{x}-based TE generator has been firstly fabricated blow the process temperature of 300 °C.

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2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

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