Annealing Effect on Amorphous Indium-Zinc-Tungsten-Oxide Thin-Film Transistors

Abstract

Annealing effect on amorphous indium-zinc-tungsten-oxide (a-IZWO) thin-film transistors (TFTs) was investigated. As the annealing temperature increases from 150 □ to 400 □ for one hour, the IZWO films remain the amorphous state being conducive to the large area uniformity. The field effect mobility of the devices increases as a function of annealing temperature and reaches to 16.2 cm2/V·s at 300 °C, along with the on/off current ratio of and subthreshold swing value of 0.20 V/decade.