Chieh-Chih Huang, Zhihong Liu, Weichuan Xing, G. Ng, E. Fitzgerald, S. Chua
{"title":"低晶圆弓200mm Si(111)晶圆上的亚微米GaN HEMT器件","authors":"Chieh-Chih Huang, Zhihong Liu, Weichuan Xing, G. Ng, E. Fitzgerald, S. Chua","doi":"10.1109/EDTM.2018.8421503","DOIUrl":null,"url":null,"abstract":"GaN-on-Silicon growth by MOCVD is wildly discussed in the context of stress and strain management. The low bow AlGaN/GaN structure grew on 200mm Si(111) wafer was demonstrated in this study. After using the sapphire pits on the normal flat susceptor, the wafer bow and residual stress decrease to 21.27um and 0.28GPa tensile stress. The GaN quality and the Rs in HEMT also got huge improvement. The sub-micron devices also show the comparable results in DC and small signal characteristics.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The Sub-micron GaN HEMT Device on 200mm Si(111) Wafer with Low Wafer Bow\",\"authors\":\"Chieh-Chih Huang, Zhihong Liu, Weichuan Xing, G. Ng, E. Fitzgerald, S. Chua\",\"doi\":\"10.1109/EDTM.2018.8421503\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaN-on-Silicon growth by MOCVD is wildly discussed in the context of stress and strain management. The low bow AlGaN/GaN structure grew on 200mm Si(111) wafer was demonstrated in this study. After using the sapphire pits on the normal flat susceptor, the wafer bow and residual stress decrease to 21.27um and 0.28GPa tensile stress. The GaN quality and the Rs in HEMT also got huge improvement. The sub-micron devices also show the comparable results in DC and small signal characteristics.\",\"PeriodicalId\":418495,\"journal\":{\"name\":\"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDTM.2018.8421503\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDTM.2018.8421503","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Sub-micron GaN HEMT Device on 200mm Si(111) Wafer with Low Wafer Bow
GaN-on-Silicon growth by MOCVD is wildly discussed in the context of stress and strain management. The low bow AlGaN/GaN structure grew on 200mm Si(111) wafer was demonstrated in this study. After using the sapphire pits on the normal flat susceptor, the wafer bow and residual stress decrease to 21.27um and 0.28GPa tensile stress. The GaN quality and the Rs in HEMT also got huge improvement. The sub-micron devices also show the comparable results in DC and small signal characteristics.
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