俄歇场效应管:亚热开关的新器件概念

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-13 DOI:10.1109/EDTM.2018.8421442

J. Teherani

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引用次数: 0

摘要

俄歇场效应管器件概念采用新的器件物理来实现低电压、低能量的开关。该装置的工作原理是在范德华异质结构的有效带隙中产生俄歇的栅极调制。俄歇产生的物理学原理——热载流子碰撞并失去能量以产生电子-空穴对——使室温下的亚热亚阈值摆动低至30毫伏/十年。

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The Auger FET: a Novel Device Concept for Subthermal Switching

The Auger FET device concept employs new device physics to achieve low-voltage, low-energy switching. The device operates on the principle of gate modulation of Auger generation across the effective band gap of a van der Waals heterostructure. The physics of Auger generation - in which a hot carrier collides and loses energy to create an electron-hole pair — enables a subthermal subthreshold swing as low as 30 mV/decade at room temperature.

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2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

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