2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)最新文献_第4页

Invited Talk Abstract 3D foams as a new thermal material for a variety of applications 摘要三维泡沫作为一种新型的热敏材料得到了广泛的应用

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-13 DOI: 10.1109/EDTM.2018.8421425

Hang Tong Edwin Teo

{"title":"Invited Talk Abstract 3D foams as a new thermal material for a variety of applications","authors":"Hang Tong Edwin Teo","doi":"10.1109/EDTM.2018.8421425","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421425","url":null,"abstract":"3D foams or sometimes termed aerogels are in essences a collection of particulate-like materials that are reconstituted into a highly porous scaffold-like structural materials. There are many variants of this 3D foams as its constituent materials can be derived from almost any nano to micro sized materials. Of the many types of these foams the most highly research would belong to the 3D-carbon and 3D-BN variants. The 3D-C variant is largely build up by graphene while the BN variant is made from 2D hexagonal BN. Both of these 3D foams are very similar in terms of their crystalline structure as well as their superior thermal properties but differ widely in their electrical and electronic characteristics. Here in this talk we will focus on some of the new applications that can be derived from these foams. Our focus would be largely on the use of the foams for thermal domains in its intrinsic form as well as its composite form. For its intrinsic use, we will demonstrate how our 3D-C and 3D-BN with high cross-plane thermal conductivity (62–86 Wm-1K-1) and excellent surface conformity could be used as high performance thermal interface materials (TIMs) with exceedingly high operational temperatures (exceeding 600 C). Besides materials characteristics, actual on-chip performance will also be showcased. On the compositional front, we will highlight how, through the integration of our foams with other matrix materials, these foams can be utilized for space protective applications.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"245 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114828233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

New device concepts, transistor architectures and materials for high performance and energy efficient CMOS circuits in the forthcoming era of 3D integrated circuits 在即将到来的3D集成电路时代，高性能和高能效CMOS电路的新器件概念，晶体管架构和材料

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-13 DOI: 10.1109/EDTM.2018.8421501

D. Esseni, O. Badami, F. Driussi, D. Lizzit, M. Pala, P. Palestri, T. Rollo, L. Selmi, S. Venica

引用次数: 0

Comprehensive 3D TSV Reliability Study on 14nm FINFET Technology with Thinned Wafers 14nm FINFET薄晶圆技术三维TSV可靠性综合研究

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-13 DOI: 10.1109/EDTM.2018.8421432

C. Premachandran, S. Cimino, Sean Ogdan, Zhuo-Jie George Wu, Daniel Smith, S. Kannan, Linjun Cao, M. Prabhu, W. Yao, R. Ranjan, L. England, P. Justison

{"title":"Comprehensive 3D TSV Reliability Study on 14nm FINFET Technology with Thinned Wafers","authors":"C. Premachandran, S. Cimino, Sean Ogdan, Zhuo-Jie George Wu, Daniel Smith, S. Kannan, Linjun Cao, M. Prabhu, W. Yao, R. Ranjan, L. England, P. Justison","doi":"10.1109/EDTM.2018.8421432","DOIUrl":"https://doi.org/10.1109/EDTM.2018.8421432","url":null,"abstract":"The impact of wafer level reliability of TSV has been studied with respect to FEOL (Front End of Line) and BEOL (Back End of Line) reliability. A TSV keep out zone (KOZ) study has been done with varying gate length and width of transistor. Gate voltage (Vg) vs saturation current (Idsat) behavior indicates that there is negligible impact on Idsat due to mechanical stress of the TSV for 5 μ m} KOZ for both NFET and PFET devices fabricated with thin and thick gate-oxide dielectric. Voltage Ramp Stress (VRS) and Constant Voltage Stress (CVS) tests were performed at 25°C and 125°C to study the FEOL gate dielectric and device reliability such as gate dielectric breakdown voltage (VBD), Hot Carrier Injection (HCI), and Bias Temperature Instability (BTI). Apart from FEOL reliability study, special test structures were also designed to capture even a minor TSV impact on the lower metal and via levels of the BEOL stack. Time Dependent Dielectric Breakdown (TDDB), Electro migration (EM), and Stress Migration (SM) were performed to investigate any potential impact to BEOL due to TSV mechanical stress or Cu pumping effects. TSV KOZ impact on electrostatic discharge (ESD) protection devices was also performed. Our study with thick and thin TSV wafer showed no significant impact of TSV integration approach on FEOL, BEOL and ESD reliability.","PeriodicalId":418495,"journal":{"name":"2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114981268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Heterogeneous Integration using the Silicon Interconnect Fabric 使用硅互连结构的异构集成

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-13 DOI: 10.1109/EDTM.2018.8421445

S. Iyer

引用次数: 2

Physics-based Compact Modeling of MSM-2DEG GaN-based Varactors for THz Applications 太赫兹应用中基于MSM-2DEG gan的变容管的物理紧凑型建模

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-13 DOI: 10.1109/EDTM.2018.8421498

Ahtisham Ul Haq Pampori, S. A. Ahsan, Sudip Ghosh, S. Khandelwal, Y. Chauhan

引用次数: 4

Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs 负电容mosfet铁电特性的设计考虑

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-13 DOI: 10.1109/EDTM.2018.8421443

A. Saeidi, F. Jazaeri, I. Stolichnov, C. Enz, A. Ionescu

引用次数: 0

2D Materials for Smart Life 智能生活的二维材料

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-09 DOI: 10.1109/EDTM.2018.8421451

K. Banerjee

引用次数: 1

Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate 用Al2O3薄膜和TiN顶栅钝化溅射沉积mos2薄沟道的芯片级集成非misfet

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI: 10.1109/EDTM.2018.8421491

K. Matsuura, J. Shimizu, Mayato Toyama, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi

引用次数: 2

Direct Observation of Chemical States in ReRAM by Laser-based Photoemission Electron Microscopy 基于激光的光电发射电子显微镜对ReRAM化学态的直接观察

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI: 10.1109/EDTM.2018.8421513

T. Taniuchi, J. Kawakita, H. Shima, Yasuhisa Naito, H. Akinaga, Shik Shin

引用次数: 0

Gettering Mechanism in Carbon-cluster-ion-implanted Epitaxial Silicon Wafers using Atom Probe Tomography 碳簇离子注入外延硅片的原子探针层析吸积机制

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI: 10.1109/EDTM.2018.8421426

Ayumi Onaka-Masada, Ryosuke Okuyama, S. Shigematsu, Hidehiko Okuda, T. Kadono, R. Hirose, Yoshihiro Koga, K. Sueoka, K. Kurita

引用次数: 1