Direct Observation of Chemical States in ReRAM by Laser-based Photoemission Electron Microscopy

Abstract

We have demonstrated the imaging of buried chemical nanostructures. Laser-based photoemission electron microscopy has been set up for imaging with very high spatial resolution. Threshold photoemission using deep ultra violet light sources is expected to have very large probing depth (> 10 nm) due to small possibility of electron scattering in materials. Using this technique we have succeeded in visualization of filament structures of buried insulating oxide layers in ReRAM.