用Al2O3薄膜和TiN顶栅钝化溅射沉积mos2薄沟道的芯片级集成非misfet

2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM) Pub Date : 2018-03-01 DOI:10.1109/EDTM.2018.8421491

K. Matsuura, J. Shimizu, Mayato Toyama, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi

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引用次数: 2

摘要

我们用溅射沉积的mos2薄膜制备了芯片级集成顶栅n型MISFET，并证实了n型工作。溅射法使我们能够形成大规模的MoS2薄膜，然后用H2S退火来补偿硫空位。两种ALD-Al2O3钝化膜增强了MoS2通道的工艺耐久性。因此，我们实现了tin顶栅n misfet，这一过程是实现具有mos2通道fet的工业芯片级lsi的实质性的第一步。

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Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate

We have fabricated a chip-level-integrated top-gate n MISFET with sputter-deposited-MoS2 film and confirmed n-type operation. A sputtering method enabled us to form a large-scale MoS2 thin film followed by H2S annealing to compensate sulfur vacancies. Two passivation films of ALD-Al2O3 enhanced the process endurance of MoS2 channel. Therefore, we realized TiN-top-gate n MISFETs and this process is a substantial first step to realize industrial chip-level LSIs with MoS2-channel FETs.

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2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM)

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