The Auger FET: a Novel Device Concept for Subthermal Switching

Abstract

The Auger FET device concept employs new device physics to achieve low-voltage, low-energy switching. The device operates on the principle of gate modulation of Auger generation across the effective band gap of a van der Waals heterostructure. The physics of Auger generation - in which a hot carrier collides and loses energy to create an electron-hole pair — enables a subthermal subthreshold swing as low as 30 mV/decade at room temperature.