晶圆旋转过程中液体流动中的颗粒去除特性

N. Handa, Satomi Hamada, M. Imai, Y. Wada, Hiroshi Sobukawa, Hirokuni Hiyama, K. Amagai
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引用次数: 0

摘要

随着半导体微型化的发展,CMP工艺所使用的浆料尺寸趋于小型化,对CMP后晶圆的高效清洗提出了更高的要求。因此,利用含硅颗粒的污染样品硅片,研究了旋转硅片上液体流动中的颗粒去除特性。此外,通过将其与旋转晶圆上液体流动的可视化图像进行比较,阐明了旋转晶圆上液体流动中的颗粒去除特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Particle removal characteristics in liquid flow during wafer rotation
With the miniaturization of the semiconductor, the slurry size used in CMP process tends to become small, and it is demanded to clean wafer efficiently after CMP. Therefore characteristic of particle removal in the liquid flow on a rotating wafer is investigated using the pollution sample wafer with the silica particle. Furthermore, particle removal properties in the liquid flow on a rotating wafer is clarified by comparing it with the visualization image of the liquid flow on a rotating wafer.
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