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Managing induced warpage of 3D-ICs packaging using multi-layered molding materials 使用多层成型材料处理3d - ic封装的诱导翘曲
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589277
Chang-Chun Lee, Yu-Huan Guo, Hou-Chun Liu, Yu-Min Lin, Tao-Chih Chang
{"title":"Managing induced warpage of 3D-ICs packaging using multi-layered molding materials","authors":"Chang-Chun Lee, Yu-Huan Guo, Hou-Chun Liu, Yu-Min Lin, Tao-Chih Chang","doi":"10.1109/INEC.2016.7589277","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589277","url":null,"abstract":"Reduced the wafer thickness has high density arrays of through silicon via (TSV). It has significantly required in the assembly technology of three-dimensional integrated circuits (3D-ICs) packages. Find a good approach during the processes. It can decrease the damage risk for stacked chips in chip thinning processes and to enhance the micro-bumps (p-bump) mechanical reliability in this study. A chip-to-wafer (C2W) module filled with a suitable filling the gap at the bottom to a combination of stacked chips and use initialization between the molding material is considered. Compared with traditional technology and methods, significant change in the manufacturing process C2W procedure is filled into the bottom during filling, in order to achieve a pre-lead type material after the step of thinning the chip. The main advantage of the above embodiment is to reduce the thickness of the thinned mechanical load applied to the adjacent molded material, while a highly reduced thickness of the stacked chips to 30 micrometers, the back support is trying to achieve stacked silicon chips. By using the suggested method another advantage is the productivity potential because subsequent packaging process can be greatly simplified.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125918033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effect of electrical properties of graphene transistors by heating in vacuum and atmosphere 真空和大气加热对石墨烯晶体管电性能的影响
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589366
Qingwei Zhang, Ping Li, G. Wang, R. Zeng, Rongyan Hu
{"title":"The effect of electrical properties of graphene transistors by heating in vacuum and atmosphere","authors":"Qingwei Zhang, Ping Li, G. Wang, R. Zeng, Rongyan Hu","doi":"10.1109/INEC.2016.7589366","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589366","url":null,"abstract":"In this paper, a comparison experiment is reported. After a graphene field effect transistor is heated in a 120 Celsius vacuum for 4 hours, its Dirac point voltage decreases 12V and maximum absolute transconductance increases 10.6 microsiemens. However, while an identical graphene field effect transistor is heated in atmosphere with the same temperature and time span, the case is on the contrary that the Dirac point voltage increases 19V and maximum absolute transconductance decreases 4.4 microsiemens. These results suggest that heating in vacuum is benefit to reduce P type impurities and enhance the mobility of graphene, but heating in atmosphere is opposite.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125053843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A VCO phase noise reduction technique to suppress the active device contribution 一种抑制有源器件贡献的压控振荡器相位降噪技术
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589433
Kai Men, Bharatha Kumar Thangarasu, K. Yeo
{"title":"A VCO phase noise reduction technique to suppress the active device contribution","authors":"Kai Men, Bharatha Kumar Thangarasu, K. Yeo","doi":"10.1109/INEC.2016.7589433","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589433","url":null,"abstract":"In this paper, a voltage-controlled oscillator (VCO) phase noise improvement technique is proposed that suppresses the phase noise contribution from the active devices. The cyclostationary noise at the VCO tail bias current source, which exhibits twice of the operation frequency, is utilized to switch the biasing transistor on and off periodically. The dc power consumption of the proposed VCO designed in 0.18 μm SiGe process is 1.03 mW with a supply voltage of 1.8 V. The simulated phase noise is -120.0 dBc/Hz at 1 MHz offset frequency and the figure-of-merit (FoM) is 179.8 dBc/Hz.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"72 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131593230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Investigation of the NBTI induced mobility degradation for precise circuit aging simulation 精密电路老化模拟中NBTI诱导迁移率退化的研究
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589408
Chenyue Ma, Xiangbin Li, F. Sun, Lining Zhang, Xinnan Lin
{"title":"Investigation of the NBTI induced mobility degradation for precise circuit aging simulation","authors":"Chenyue Ma, Xiangbin Li, F. Sun, Lining Zhang, Xinnan Lin","doi":"10.1109/INEC.2016.7589408","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589408","url":null,"abstract":"Ignoring the mobility degradation due to the negative bias temperature instability (NBTI) probably results in overestimation of the ON-state current This paper investigated the mobility degradation based on the universal NBTI model. Coulomb scattering is revealed as dominant component originated from the interface state generation. Mobility degradation plays a significant role in evaluating the threshold voltage shift due to the coupling effects of NBTI-HCI (hot carrier injection) and NBTI-SHE (self-heating effect).","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"211 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115938291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A low-power 2K/4K range-controlled communication chip design for mobile payment 一种用于移动支付的低功耗2K/4K程控通信芯片设计
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589350
C. Yicheng, Zheng Zhaoxia
{"title":"A low-power 2K/4K range-controlled communication chip design for mobile payment","authors":"C. Yicheng, Zheng Zhaoxia","doi":"10.1109/INEC.2016.7589350","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589350","url":null,"abstract":"When 2.4G RF technology is applied to mobile payment, power consumption and the distance of swing card become crucial challenges. This paper presents an architecture and circuit design for low power 2K/4K rate RCC(range-controlled communication) chip for waking up and configuring the 2.4G RF chip. The signal is transmitted by the low frequency electromagnetic field, which attenuation rapidly with the distance increase. Three-stage programmable gain amplifiers are used to amplify signals. Digital-to-analog converters and comparators are design for judgment the transaction approach and departure.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126087476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A low-power 14-bit hybrid incremental sigma-delta/cyclic ADC for X-ray sensor array 用于x射线传感器阵列的低功耗14位混合增量σ - δ /循环ADC
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589266
Zhuo Zhang, Yacong Zhang, Miaomiao Fair, Meng Zhao, Dahe Liu, Wengao Lu, Zhongjian Chen
{"title":"A low-power 14-bit hybrid incremental sigma-delta/cyclic ADC for X-ray sensor array","authors":"Zhuo Zhang, Yacong Zhang, Miaomiao Fair, Meng Zhao, Dahe Liu, Wengao Lu, Zhongjian Chen","doi":"10.1109/INEC.2016.7589266","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589266","url":null,"abstract":"This paper presents a column-level 14-bit two-stage analog-to-digital converter (ADC) based on pseudo-differential operational amplifier, which is designed for the readout circuit of X-ray sensor array. This low-power hybrid ADC employs an incremental sigma-delta ADC and a cyclic ADC, achieving a good trade-off between accuracy and conversion speed. The two stages share the same analog circuit to reduce area and power consumption. A test chip is fabricated in 0.18μm CMOS technology. The hybrid ADC in each column is performed in parallel with power consumption of 218.813μW. The simulation result reveals the effective number of bits (ENOB) is 13.775 bits.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127993303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
An HfO2-based resistive switching memory device with good anti-radiation capability 一种具有良好抗辐射性能的hfo2型阻性开关存储器件
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589454
S. Hu, Y. Liu, L. Deng, Q. Yu, Qi Guo, Yudong Li, Xing-yao Zhang
{"title":"An HfO2-based resistive switching memory device with good anti-radiation capability","authors":"S. Hu, Y. Liu, L. Deng, Q. Yu, Qi Guo, Yudong Li, Xing-yao Zhang","doi":"10.1109/INEC.2016.7589454","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589454","url":null,"abstract":"Electrical characteristics of an HfO2-based resistive switching memory device are investigated before and after exposure to γ ray radiation for various total ionizing doses (TIDs). The device can still function properly after radiation, showing a good anti-radiation capability. After exposure to radiation, the set and reset voltages of the device decrease very slightly, and the resistance of the low-resistance state and the high-resistance state shows little increase. The very small changes of set voltage, reset voltage and resistance after radiation do not influence the proper function of the device. The γ ray radiation does not significantly degrade both retention and endurance characteristics even after a high-TID exposure.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116573197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multimode interference isolator on Silicon-on-Insulator platform 基于绝缘体上硅平台的多模干扰隔离器
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589288
Keyi Shui, L. Deng, L. Bi
{"title":"Multimode interference isolator on Silicon-on-Insulator platform","authors":"Keyi Shui, L. Deng, L. Bi","doi":"10.1109/INEC.2016.7589288","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589288","url":null,"abstract":"This paper presents the design of a multimode interference(MMI) based optical isolator on Silicon-On-Insulator (SOI) structure, by using the magneto-optical (MO) nonreciprocal phase shift (NRPS) of an MO thin film cladding on silicon waveguides. Finite element method (FEM) simulation based on coupled mode theory is applied to calculate the performance of the isolator. An isolator with isolation ratio of 25.8 dB, 20 dB bandwidth of 1.6 nm and insertion loss of 5.4 dB, considering all material and junction losses can be achieved in the proposed device at around 1550 nm wavelength.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116938136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Charge transfer effect at the La0.7Ca0.3MnO3/NiO heterojunction and the novel interface ferromagnetism La0.7Ca0.3MnO3/NiO异质结的电荷转移效应及新型界面铁磁性
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589312
X. Ning, Mingjing Chen, Shufang Wang, Guangsheng Fu
{"title":"Charge transfer effect at the La0.7Ca0.3MnO3/NiO heterojunction and the novel interface ferromagnetism","authors":"X. Ning, Mingjing Chen, Shufang Wang, Guangsheng Fu","doi":"10.1109/INEC.2016.7589312","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589312","url":null,"abstract":"We report the formation of a new ferromagnetic (FM) states in the antiferromagnet (AFM) NiO at the interface with ferromagnet (FM) La<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> (LCMO). The new magnetization temperature at 80 K is observed and can be ascribed to Ni<sup>3+</sup>-O-Mn<sup>3+</sup> superexchange interactions. Mn 3s and Ni 3p core-level spectra have been measured by x-ray photoelectron spectroscopy (XPS) which show a direct evidence of charge transfer effects of the type Mn<sup>4+</sup>-Ni<sup>2+</sup> → Mn<sup>3+</sup>-Ni<sup>3+</sup> at the interface region. The valence band offset (VBO) at the LCMO/NiO interface can be determined to be ΔE<sub>VBO</sub> ~ 0.77 eV. The valence band of NiO is shifted to higher binding energy compared to LCMO. Thus, charge transfer occurred owing to the valence band edge shifting at the heterostructure interfaces.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131801398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A field-induced threshold switching model of phase-change memory 相变存储器的场致阈值开关模型
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589445
Yiqun Wei, Xinnan Lin
{"title":"A field-induced threshold switching model of phase-change memory","authors":"Yiqun Wei, Xinnan Lin","doi":"10.1109/INEC.2016.7589445","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589445","url":null,"abstract":"This work presents a field-induced threshold switching model of phase-change memory, which combines the field-induced hopping transport mechanism and trap to band excitation mechanism to establish the conductivity model coupled with the electric field. Based on this model, the dependencies with scaling for switching characteristics are studied. The results show a good consistence with the measurements.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"206 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132236063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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