精密电路老化模拟中NBTI诱导迁移率退化的研究

2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI:10.1109/INEC.2016.7589408

Chenyue Ma, Xiangbin Li, F. Sun, Lining Zhang, Xinnan Lin

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引用次数: 4

摘要

忽略负偏置温度不稳定性(NBTI)导致的迁移率退化可能会导致对导通电流的高估。库仑散射是界面态产生的主导分量。由于NBTI-HCI(热载流子注入)和NBTI-SHE(自热效应)的耦合效应，迁移率退化在评估阈值电压位移中起着重要作用。

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Investigation of the NBTI induced mobility degradation for precise circuit aging simulation

Ignoring the mobility degradation due to the negative bias temperature instability (NBTI) probably results in overestimation of the ON-state current This paper investigated the mobility degradation based on the universal NBTI model. Coulomb scattering is revealed as dominant component originated from the interface state generation. Mobility degradation plays a significant role in evaluating the threshold voltage shift due to the coupling effects of NBTI-HCI (hot carrier injection) and NBTI-SHE (self-heating effect).

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2016 IEEE International Nanoelectronics Conference (INEC)

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