Investigation of the NBTI induced mobility degradation for precise circuit aging simulation

Abstract

Ignoring the mobility degradation due to the negative bias temperature instability (NBTI) probably results in overestimation of the ON-state current This paper investigated the mobility degradation based on the universal NBTI model. Coulomb scattering is revealed as dominant component originated from the interface state generation. Mobility degradation plays a significant role in evaluating the threshold voltage shift due to the coupling effects of NBTI-HCI (hot carrier injection) and NBTI-SHE (self-heating effect).