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2016 IEEE International Nanoelectronics Conference (INEC)最新文献

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Calibration problem of Transmission Line Pulse for ESD protection design ESD防护设计中传输线脉冲校正问题
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589409
Teruo Suzuki, Mitsuhiro Tomita, S. Tajima, Masaru Ito
{"title":"Calibration problem of Transmission Line Pulse for ESD protection design","authors":"Teruo Suzuki, Mitsuhiro Tomita, S. Tajima, Masaru Ito","doi":"10.1109/INEC.2016.7589409","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589409","url":null,"abstract":"The degree of leaning of the Electro-Static Discharge (ESD) wave form (hereinafter referred as RON) of ESD protection parameters is closely related to the internal core circuit damage. Accurate measurement of RON requires stable short calibration with Transmission Line Pulse (TLP). In particular, for the high-precision ESD design of the thin gate oxide transistor in the most advanced technology, the high accuracy RON measurement of TLP is required. During short calibration, we found the contact resistance between the packaged sample and integrated circuit (IC) socket varied depending on the calibration current. Scanning Electron Microscope (SEM) analysis of contacts made it clear.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125440617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two types of photonic crystals applied to glucose sensor 应用于葡萄糖传感器的两种光子晶体
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589369
Xin Zhao, Qian Zheng, Zhi Yang
{"title":"Two types of photonic crystals applied to glucose sensor","authors":"Xin Zhao, Qian Zheng, Zhi Yang","doi":"10.1109/INEC.2016.7589369","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589369","url":null,"abstract":"The current medical measurement of human blood glucose concentration is invasive. In order to relieve the suffering of patient and improve the efficiency, a non-invasive optical glucose sensor is required. Based on these advantages, this paper designs a filter based on basic two-dimensional photonic crystal structure by using different array structure. Based on Rsoft simulation software, the dimensional photonic crystal models are built. By changing the lattice structure and the depth of the apertures, the power transmission of the sensor is analyzed. The sensor is fabricated in 3 inch chip.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122764001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An inductive peaking technology for high-speed MIPI receiver bandwidth expanding in a 90 nm CMOS process 一种90纳米CMOS制程中用于高速MIPI接收器带宽扩展的感应峰值技术
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589399
Shuangyi Wu, Qiwei Wang, N. Ning, Jing Li
{"title":"An inductive peaking technology for high-speed MIPI receiver bandwidth expanding in a 90 nm CMOS process","authors":"Shuangyi Wu, Qiwei Wang, N. Ning, Jing Li","doi":"10.1109/INEC.2016.7589399","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589399","url":null,"abstract":"An inductive peaking technology is proposed in this paper for improving receiver bandwidth. A N/PMOS cross biasing active inductor and negative Miller capacitance are introduced to provide inductive peaking around the amplifier bandwidth. According to the simulation and experimental results within a MIPI receiver under 1.2V CMOS 90nm process, the inductive peaking technology increases the bandwidth of the preamplifier in the MIPI PHY circuit from 1.05GHz to 2.09GHz. As a results, the PHY circuit which employs the inductive peaking amplifier consumes only 4mW power for transferring 1Gbps data signal with 70mV differential amplitude to 1.2V CMOS level.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121439325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optimizing the electroplating condition of an acid low cyanide silver bath and its application in micromachining 酸性低氰银浴电镀条件的优化及其在微加工中的应用
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589458
Bo Wang, Hong Wang, P. Cheng, Zhuo-qing Yang, G. Ding
{"title":"Optimizing the electroplating condition of an acid low cyanide silver bath and its application in micromachining","authors":"Bo Wang, Hong Wang, P. Cheng, Zhuo-qing Yang, G. Ding","doi":"10.1109/INEC.2016.7589458","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589458","url":null,"abstract":"In this paper, an acid low cyanide silver bath was introduced for producing silver film. The effect of current density and temperature of bath on the properties of silver film was studied. Through analyzing the crystalline grains and average roughness of silver film, the optimum current density and temperature were and 3mA/cm2 and 15°C. Then the patterning silver film was obtained by micromachining process under the optimum electroplating condition. The width of patterned photoresist was the same with the width of silver film which indicated it could be compatible with micromachining process.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122495349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel structure embedded with dual-diodes and silicon controlled rectifier for high speed I/O applications 新型结构嵌入双二极管和可控硅整流器的高速I/O应用
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589443
Aihua Dong, M. Miao, J. Liou, J. Salcedo, J. Hajjar
{"title":"Novel structure embedded with dual-diodes and silicon controlled rectifier for high speed I/O applications","authors":"Aihua Dong, M. Miao, J. Liou, J. Salcedo, J. Hajjar","doi":"10.1109/INEC.2016.7589443","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589443","url":null,"abstract":"Design trade-offs of a novel structure embedded with a silicon controlled rectifier and dual-diode (DD-SCR) for high speed I/O applications are presented. A metal-bounded DD-SCR exhibiting a high failure current (It2), small on-state resistance (Ron), low voltage overshoot and low parasitic capacitance is introduced as an optimal device for such applications in advanced CMOS processes. Comprehensive characterizations including capacitance and current vs. voltage measured using transmission line pulsing (TLP) and very-fast TLP (VFTLP) are undertaken to demonstrate the DD-SCR performance.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132746934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Too noisy at the nanoscale? — The rise of random telegraph noise (RTN) in devices and circuits 纳米尺度太吵了?-设备和电路中随机电报噪声(RTN)的增加
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589405
Runsheng Wang, Shaofeng Guo, P. Ren, Mulong Luo, Jibin Zou, Ru Huang
{"title":"Too noisy at the nanoscale? — The rise of random telegraph noise (RTN) in devices and circuits","authors":"Runsheng Wang, Shaofeng Guo, P. Ren, Mulong Luo, Jibin Zou, Ru Huang","doi":"10.1109/INEC.2016.7589405","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589405","url":null,"abstract":"This paper gives an outline of our recent findings on the random telegraph noise (RTN) in nanoscale MOS devices and circuits.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114171442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A novel MASH 2-1 sigma-delta A/D converter with high-to-low conversion for closed-loop MEMS accelerometer interface 用于闭环MEMS加速度计接口的新型MASH 2-1 σ - δ A/D转换器的高-低转换
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589323
Hongzhe Li, Feng Wu, Meng Zhao, Zhongjian Chen, Wengao Lu, Yacong Zhang
{"title":"A novel MASH 2-1 sigma-delta A/D converter with high-to-low conversion for closed-loop MEMS accelerometer interface","authors":"Hongzhe Li, Feng Wu, Meng Zhao, Zhongjian Chen, Wengao Lu, Yacong Zhang","doi":"10.1109/INEC.2016.7589323","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589323","url":null,"abstract":"In this paper, an A/D converter offering the high-to-low level shifter function applied to the high range digital closed-loop MEMS accelerometer interface is presented. In the interface circuit, the analog front-end circuit works in the high-voltage domain and the digital back-end circuit works in the low-voltage domain, however, the cascade MASH 2-1 sigma-delta ADC just can achieve high-voltage signal converting to low-voltage signal without introducing additional high-to-low transition module. The level shifter is mainly realized by the first integrator by means of using switched-capacitor charge transfer principle. The cascade MASH 2-1 sigma-delta ADC performs a maximum signal-to-noise-plus-distortion ratio (S/(N+D)) rms/rms of 113.6 dB with 200 Hz bandwidth and sampling clock of 100-kHz. The interface was designed in TSMC 0.35 um CMOS process and was sent to the foundry to prototype.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114777591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Electrical control of antiferromagnetic metals 反铁磁性金属的电气控制
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589362
Yuyan Wang, C. Song, F. Pan
{"title":"Electrical control of antiferromagnetic metals","authors":"Yuyan Wang, C. Song, F. Pan","doi":"10.1109/INEC.2016.7589362","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589362","url":null,"abstract":"We demonstrate a reversible electrical control ot exchange spring in IrMn antiferromagnet (AFM), using an ionic liquid to exert a substantial electric-field. When coupled to Co/Pt, the exchange bias is manipulated with gate voltage via the tune of the exchange spring, which could transfer the “force” to the ferromagnet/AFM interface, enabling a deeper modulation depth with the IrMn thickness up to 5 nm. Besides the fundamental significance of modulating the spin structures in metallic AFM via all-electrical fashion, it would advance the development of low-power-consumption AFM spintronics.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121735379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A novel insight into transient behaviors of diode-triggered SCRs under VF-TLP testing by 2D/3D simulations 通过2D/3D模拟，对二极管触发scr在VF-TLP测试下的瞬态行为有了新的认识
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589322
Lizhong Zhang, Y. Wang, Yandong He
{"title":"A novel insight into transient behaviors of diode-triggered SCRs under VF-TLP testing by 2D/3D simulations","authors":"Lizhong Zhang, Y. Wang, Yandong He","doi":"10.1109/INEC.2016.7589322","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589322","url":null,"abstract":"Transient behaviors of the diode-triggered silicon controlled rectifiers (DTSCRs) under very-fast transmission line pulse (VF-TLP) testing are investigated in this paper. The underlying physics needs to be comprehensively investigated and 2D/3D device simulations are well performed and compared. Analysis uncovers that the turn-on process of intrinsic SCR is ascribed to Darlington effect as well as junction breakdown.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"793 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123902916","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Experimental and computational studies on the refractive index and interface state for nano interface of SiO2/Si and Si3N4/SiO2/Si SiO2/Si和Si3N4/SiO2/Si纳米界面折射率和界面态的实验与计算研究
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589274
Li-mei Rong, Bo Liu, Zhi-jun Meng, Kui Liu, Q. Yu, Yang Liu
{"title":"Experimental and computational studies on the refractive index and interface state for nano interface of SiO2/Si and Si3N4/SiO2/Si","authors":"Li-mei Rong, Bo Liu, Zhi-jun Meng, Kui Liu, Q. Yu, Yang Liu","doi":"10.1109/INEC.2016.7589274","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589274","url":null,"abstract":"The refractive index and the interface state were studied for SiO2/Si and Si3N4/SiO2/Si using ellipsometry and the conductance method. The local optical performance of interface structure is modeled and calculated by layered capacitors method. The fitting ellipsometry dates agreed with its measurement and the calculate date of refractive index cross the SiO2/Si interface showed the similar trend with the results of ellipsometry. And the correlation between the thickness of the interface structure, the oxidation state, the refractive index, and the interface state is analyzed.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"175 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123952537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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