{"title":"Too noisy at the nanoscale? — The rise of random telegraph noise (RTN) in devices and circuits","authors":"Runsheng Wang, Shaofeng Guo, P. Ren, Mulong Luo, Jibin Zou, Ru Huang","doi":"10.1109/INEC.2016.7589405","DOIUrl":null,"url":null,"abstract":"This paper gives an outline of our recent findings on the random telegraph noise (RTN) in nanoscale MOS devices and circuits.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2016.7589405","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
This paper gives an outline of our recent findings on the random telegraph noise (RTN) in nanoscale MOS devices and circuits.