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2016 IEEE International Nanoelectronics Conference (INEC)最新文献

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A force rebalance and quadrature offset control method for the sense mode of MEMS gyroscopes MEMS陀螺仪传感模式的力再平衡和正交偏移控制方法
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589267
B. Zhao, Zhou Hao, Li Xianxue
{"title":"A force rebalance and quadrature offset control method for the sense mode of MEMS gyroscopes","authors":"B. Zhao, Zhou Hao, Li Xianxue","doi":"10.1109/INEC.2016.7589267","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589267","url":null,"abstract":"This paper describes a force rebalance and quadrature offset control method for the sense mode of silicon-on-glass z axis gyroscope operating at atmospheric pressure. Quadrature offset is an important strategy to correct the structural imperfection. The force rebalances method for the sense mode of MEMS gyroscope is used to improve the quality of sense axis. A double decoupled MEMS tuning fork gyroscope is used to carry out the experiment. The measured scale factor was 6.9 mV/°/s in a range of ±360 °/s with a nonlinearity of 0.09%. Zero bias stability of 0.7 °/h for long term measurements.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116272991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Characterization of NiCrOx thin films deposited by reactive sputtering at different O2 flow rate 不同O2流速下反应溅射沉积NiCrOx薄膜的表征
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589320
He Yu, Tao Wang, Shuanghong Wu, Xiang Dong, Jun Gou, Xiaohui Wang, Yadong Jiang, Rui Wu
{"title":"Characterization of NiCrOx thin films deposited by reactive sputtering at different O2 flow rate","authors":"He Yu, Tao Wang, Shuanghong Wu, Xiang Dong, Jun Gou, Xiaohui Wang, Yadong Jiang, Rui Wu","doi":"10.1109/INEC.2016.7589320","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589320","url":null,"abstract":"NiCrOx thin films were prepared by DC reactive magnetron sputtering from a NiCr metal target in Ar+O2 with the different O2 gas flow varied from 0 to 6 seem. The influence of the O2 flow rate on the deposition rate, film composition and optical properties were investigated. EDX detected a decrease in the Cr concentration with the increasing of oxygen flow rate due to the preferential oxidation of Cr to Cr2O3. The deposition rate decreases dramatically at oxygen flow of 2.6 seem, corresponding to the transition point from metal mode to compound mode on the target. Furthermore, an original numerical model, based on the standard Berg model was used to calculate the composition evaluation and deposition rate of NiCrOx films. Results show a reasonable agreement between numerical and experimental data.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124746957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Oxide thin-film transistor for flexible display applications 用于柔性显示应用的氧化薄膜晶体管
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589402
N. D. Trung, Hyun-Suk Kim
{"title":"Oxide thin-film transistor for flexible display applications","authors":"N. D. Trung, Hyun-Suk Kim","doi":"10.1109/INEC.2016.7589402","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589402","url":null,"abstract":"Flexible thin-film transistors (TFTs) incorporating In-Ga-Zn-O (IGZO) as the active layer were fabricated on polyemide (PI) substrates, which were detached from the carrier glass after TFT fabrication. The application of appropriate buffer layer and mechanical strain affected the TFT performance and stability. The adoption of the SiNx/AlOx buffer layer as water and hydrogen diffusion barriers significantly improved the devices performance and stability compared to single SiNx or SiOx buffer layers. The TFT performance and reliability under negative bias illumination stress (NBIS) degrade considerably in once the PI film is detached from glass substrate. It is suggested that mechanical strain induces the formation of excess oxygen vacancies in the IGZO film, and these become ionized upon illumination to act as net positive charge traps.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128562013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
DMG insulated shallow extension cylindrical GAA Schottky Barrier MOSFET for removal of ambipolarity: A novel approach 用于去除双极性的DMG绝缘浅延伸圆柱形GAA肖特基势垒MOSFET:一种新方法
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589309
M. Kumar, Yogesh Pratap, Mridula Gupta, S. Haldar, R. Gupta
{"title":"DMG insulated shallow extension cylindrical GAA Schottky Barrier MOSFET for removal of ambipolarity: A novel approach","authors":"M. Kumar, Yogesh Pratap, Mridula Gupta, S. Haldar, R. Gupta","doi":"10.1109/INEC.2016.7589309","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589309","url":null,"abstract":"This paper proposes a novel Dual Metal Gate (DMG) Insulated Shallow Extension (ISE) Cylindrical Gate All Around (CGAA) Schottky Barrier (SB) MOSFET to eliminate the ambipolar behaviour of SB-CGAA MOSFET by blocking the metal induced gap states as well as unwanted charge sharing between source/channel and drain/channel regions. The Ion/Ioff ratio of DMG-ISE-CGAA-SB MOSFET increases by 362 times offering steeper subthreshold slope (67.59 mV/decade) and improved cut-off frequency makes it attractive candidate for CMOS digital circuit design.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130692442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fully integrated electromagnetic actuator using resin-bonded NdFeB micromagnets 采用树脂粘结钕铁硼微磁体的完全集成电磁执行器
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589368
Kai Tao, Jin Wu, S. Lye, J. Miao, Zhuo-qing Yang, G. Ding, Di Chen
{"title":"Fully integrated electromagnetic actuator using resin-bonded NdFeB micromagnets","authors":"Kai Tao, Jin Wu, S. Lye, J. Miao, Zhuo-qing Yang, G. Ding, Di Chen","doi":"10.1109/INEC.2016.7589368","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589368","url":null,"abstract":"This paper presents the fabrication and characterization of a novel fully integrated electromagnetic actuator using resin-bonded NdFeB micromagnets. The whole architecture is formed using the surface micromachining technology with a laminated photoresist sacrificial layer process on quartz substrate. Thanks to the MEMS compatible fabrication process, the volume of the fabricated actuator is only about 10 mm3, which makes it one of the smallest electromagnetic actuators reported to date. By altering the direction of the input current, the actuating displacements of approximately ±10 μm in both attraction and repulsion could be achieved. This serves to demonstrate the viability and compatibility of using polymer-bonded magnets for MEMS applications.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"377 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122109545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Performance evaluation and optimization of single layer MoS2 double gate transistors with metallic contacts 金属触点MoS2单层双栅极晶体管的性能评价与优化
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589295
L. Zeng, Fanghui Gong, J. Nan, Yangqi Huang, He Zhang, Xiaoyan Liu, Youguang Zhang, Weisheng Zhao
{"title":"Performance evaluation and optimization of single layer MoS2 double gate transistors with metallic contacts","authors":"L. Zeng, Fanghui Gong, J. Nan, Yangqi Huang, He Zhang, Xiaoyan Liu, Youguang Zhang, Weisheng Zhao","doi":"10.1109/INEC.2016.7589295","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589295","url":null,"abstract":"In this work, the performance of single layer MoS2 double gate transistors with metallic contacts is evaluated with quantum ballistic calculation. The image force which is crucial for accurate simulation of Schottky barrier is taken into account. The simulation results reveal that increasing doping concentration is the most effective way to adjust transistor performance, and device performance of transistors with metallic contacts can be comparable and even outperforms that with ohmic contacts.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125686314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Three-terminal spintronics devices for integrated circuits 集成电路用三端自旋电子学器件
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589372
S. Fukami, Chaoliang Zhang, S. DuttaGupta, A. Kurenkov, T. Anekawa, H. Ohno
{"title":"Three-terminal spintronics devices for integrated circuits","authors":"S. Fukami, Chaoliang Zhang, S. DuttaGupta, A. Kurenkov, T. Anekawa, H. Ohno","doi":"10.1109/INEC.2016.7589372","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589372","url":null,"abstract":"Spintronics-based integrated circuits open up a new pathway toward ultralow-power and high-performance computing systems. Three-terminal spintronics devices, which achieves fast and reliable operation due to a relaxed control of parameters, have attracted increasing attention. We here review our recent studies on spin-orbit torque induced magnetization switching, which can be applied to the write operation of the three-terminal devices. We demonstrate the switching in a new device geometry and in a new material system.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126668548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Flexible magnetic sensor based on FBAR 基于FBAR的柔性磁传感器
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589341
Yong Wu, S. Dong, Hao Jin, Xiaozhi Wang, G. Chen
{"title":"Flexible magnetic sensor based on FBAR","authors":"Yong Wu, S. Dong, Hao Jin, Xiaozhi Wang, G. Chen","doi":"10.1109/INEC.2016.7589341","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589341","url":null,"abstract":"Film bulk acoustic wave resonator (FBAR) is widely-used as RF filter or sensor due to its high frequency and Q-factor. This paper demonstrates the feasibility of FBAR as flexible magnetic sensors, like sticker. The proposed Sensor has a ZnO piezoelectric sandwich structure with magnetostrictive nickel (Ni) electrodes on the Polyimide (PI) substrate. The characteristics of the magnetic sensors have been investigated experimentally and theoretically. The testing results show its sensitivity is about 100Hz/Gs.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128864015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Temperature dependence of the ordinary Hall effect in ferrimagnetic Co83Gd17 thin films 铁磁性Co83Gd17薄膜中普通霍尔效应的温度依赖性
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589396
Shiwei Chen, J. Han, Tao Wang, Dezheng Yang, D. Xue
{"title":"Temperature dependence of the ordinary Hall effect in ferrimagnetic Co83Gd17 thin films","authors":"Shiwei Chen, J. Han, Tao Wang, Dezheng Yang, D. Xue","doi":"10.1109/INEC.2016.7589396","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589396","url":null,"abstract":"We systematically study the Hall effects of ferrimagnetic Co83Gd17 thin films with the thicknesses t from 5 to 160 nm. We find that the ordinary Hall coefficient is significantly affected by thickness and temperature. With increasing temperature from 10 to 300 K, for large thickness i.e. t = 160 nm the value of ordinary Hall coefficient is always positive and gradually increases. However, for small thickness i.e. t = 10 nm the value of ordinaiy Hall coefficient is suddenly changed sign from +5.4×10-5 to -2.6×10-3 cm3/C at 140 K By analyzing the resistivity of Co83Gd17 as a function of temperature, the ordinary Hall Effect with respect to the thickness can be explained by the influence of boundary scattering on the relaxation rate of carriers and different dominant carriers with the changing temperature in the amorphous films.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127733767","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
LMS based adaptive bit weights error extraction algorithm used in high resolution A/D converters 基于LMS的自适应码重误差提取算法在高分辨率A/D转换器中的应用
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589289
Ting Li, Yuxin Wang, Yong Zhang, Zhengbo Huang
{"title":"LMS based adaptive bit weights error extraction algorithm used in high resolution A/D converters","authors":"Ting Li, Yuxin Wang, Yong Zhang, Zhengbo Huang","doi":"10.1109/INEC.2016.7589289","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589289","url":null,"abstract":"A LMS (Least Mean Square) based adaptive bit weights error extraction algorithm used in A/D converters is presented in this paper. Only a sine wave input is needed, each bit weight error of the A/D converter (ADC) can be extracted by the presented algorithm by using the digital output of the ADC. The adaptive bit weights error extraction algorithm is used in an 18-bit ADC, the tested results show that, the SNR is improved by 17.4dB and the SFDR is improved by 18.4 dB after the ADC is calibrated by the extracted bit weights error.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132476614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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