Performance evaluation and optimization of single layer MoS2 double gate transistors with metallic contacts

Abstract

In this work, the performance of single layer MoS2 double gate transistors with metallic contacts is evaluated with quantum ballistic calculation. The image force which is crucial for accurate simulation of Schottky barrier is taken into account. The simulation results reveal that increasing doping concentration is the most effective way to adjust transistor performance, and device performance of transistors with metallic contacts can be comparable and even outperforms that with ohmic contacts.