S. Fukami, Chaoliang Zhang, S. DuttaGupta, A. Kurenkov, T. Anekawa, H. Ohno
{"title":"Three-terminal spintronics devices for integrated circuits","authors":"S. Fukami, Chaoliang Zhang, S. DuttaGupta, A. Kurenkov, T. Anekawa, H. Ohno","doi":"10.1109/INEC.2016.7589372","DOIUrl":null,"url":null,"abstract":"Spintronics-based integrated circuits open up a new pathway toward ultralow-power and high-performance computing systems. Three-terminal spintronics devices, which achieves fast and reliable operation due to a relaxed control of parameters, have attracted increasing attention. We here review our recent studies on spin-orbit torque induced magnetization switching, which can be applied to the write operation of the three-terminal devices. We demonstrate the switching in a new device geometry and in a new material system.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2016.7589372","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Spintronics-based integrated circuits open up a new pathway toward ultralow-power and high-performance computing systems. Three-terminal spintronics devices, which achieves fast and reliable operation due to a relaxed control of parameters, have attracted increasing attention. We here review our recent studies on spin-orbit torque induced magnetization switching, which can be applied to the write operation of the three-terminal devices. We demonstrate the switching in a new device geometry and in a new material system.