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2016 IEEE International Nanoelectronics Conference (INEC)最新文献

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Fabrication of nanostructured porous silicon for power switch peripheries 功率开关外设用纳米多孔硅的制备
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589419
Bin Lu, D. Alquier, G. Gautier, A. Fèvre, S. Ménard, B. Morillon
{"title":"Fabrication of nanostructured porous silicon for power switch peripheries","authors":"Bin Lu, D. Alquier, G. Gautier, A. Fèvre, S. Ménard, B. Morillon","doi":"10.1109/INEC.2016.7589419","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589419","url":null,"abstract":"The tunable semi-insulating nature of nanostructured porous silicon gives rise to a potential application in semiconductor industry - power switch periphery. In this work, fabrication of nanostructured porous silicon by anodic etching is investigated. The relationship between anodization conditions and resulting morphology is defined. Our work demonstrates that, by careful tuning structure, thickness and porosity, well-engineered nanostructured porous silicon enables controlling electronic insulation properties, which certainly broaden the design option of power device periphery.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"31 50","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120929297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simulation of the RRAM-based flip-flops with data retention 基于随机存储器的数据保留触发器仿真
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589321
Mu Li, Peng Huang, Lei Shen, Zheng Zhou, J. Kang, Xiaoyan Liu
{"title":"Simulation of the RRAM-based flip-flops with data retention","authors":"Mu Li, Peng Huang, Lei Shen, Zheng Zhou, J. Kang, Xiaoyan Liu","doi":"10.1109/INEC.2016.7589321","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589321","url":null,"abstract":"A RRAM-based non-volatile flip-flop (NYFF) is designed to meet energy efficiency requirement for standby-power-critical applications in the deployment solution of IoT (Internet of Things). Adding only a pair of 1T1R cell into slave latch of a traditional FF can cut off the standby leakage at the cost of 4pJ write energy, and 20ps data retention time upon ideal power-on. The NVFF circuit is simulated and analyzed in HSPICE with a SPICE compact model of oxide-based RRAM on the conductive filament evolution model.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121136300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A fully integrated W-band beamformer in 0.13-μm SiGe BiCMOS technology based on distributed true-time-delay architecture 基于分布式实时延迟架构的0.13 μm SiGe BiCMOS技术全集成w波段波束形成器
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589421
Z. Wang
{"title":"A fully integrated W-band beamformer in 0.13-μm SiGe BiCMOS technology based on distributed true-time-delay architecture","authors":"Z. Wang","doi":"10.1109/INEC.2016.7589421","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589421","url":null,"abstract":"A 4:1 True-Time-Delay (TTD) beamformer architecture is proposed in this paper based on distributed circuit topology. This architecture and its dual form can be employed in both transmitter and receiver sides. Its implementation in a W-band imaging system has been demonstrated in 0.13-μm SiGe BiCMOS. The wideband variable delay of each path is controllable from Ops to 2ps with 0.45ps steps, corresponding to steering angle from -18° to +18° with a step of 4.5°.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126475034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High performance design of tunneling FET for low voltage/power applications: Strategies and solutions 用于低电压/功率应用的隧道场效应管的高性能设计:策略和解决方案
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589429
S. Chung
{"title":"High performance design of tunneling FET for low voltage/power applications: Strategies and solutions","authors":"S. Chung","doi":"10.1109/INEC.2016.7589429","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589429","url":null,"abstract":"The strategy and solutions in the design of tunneling FET for low voltage/power applications will be addressed in this paper. Two different approaches have been demonstrated. The first design is based on the design of a raised-drain structure which results in a low Cgd, and the reduction of source-to-drain leakage. The second design is based on the concept of alignment between the max. electric field and B2BT rate to enhance the performance of TFET. It was demonstrated in an L-gate structure TFET. Both cases show an efficient improvement of the Ion current, lower S.S. and good delay performance. Finally, a bi-directional pass gate has been applied to complementary TFET SRAM to improve the WNM and RSNM, with operation voltage down to 0.3V. This shows great potential of the proposed TFET structure and schemes for ultra-low power applications.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126817330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A novel dual-SCR ESD protection structure in 0.35-μm SiGe BiCMOS process 一种新型的0.35 μm SiGe BiCMOS双晶闸管ESD保护结构
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589453
Hou Fei, Liu Nie, Liu Ji-zhi, Liu Zhiwei
{"title":"A novel dual-SCR ESD protection structure in 0.35-μm SiGe BiCMOS process","authors":"Hou Fei, Liu Nie, Liu Ji-zhi, Liu Zhiwei","doi":"10.1109/INEC.2016.7589453","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589453","url":null,"abstract":"This paper presents a novel dual silicon controlled rectifier (SCR) with silicon-germanium heterojunction bipolar transistor (SiGe HBT) in a 0.35-μm SiGe BiCMOS process. This device includes two back-to-back HBTs with shared sub-collector. Two resistors are connected parallel with base electrode and emitter electrode in each HBT. In order to enhance the protective ability, a layout of multiple emitter fingers shared with one common base are proposed. The TLP test results prove the ability of ESD protection.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131646097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface-dependent conductivity, transition type, and band structure in amorphous indium tin oxide films 非晶氧化铟锡薄膜的表面相关电导率、跃迁类型和能带结构
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589420
Yaqin Wang, Wu Tang
{"title":"Surface-dependent conductivity, transition type, and band structure in amorphous indium tin oxide films","authors":"Yaqin Wang, Wu Tang","doi":"10.1109/INEC.2016.7589420","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589420","url":null,"abstract":"Amorphous indium tin oxide thin films on polymers exhibit an interesting substrate morphology effect on conductivity, optical transition types and band structure. The relation between conductivity and surface roughness is well explained by a simplified film system model with a square potential. The transition types originated from the optical transmittance spectra is found to be inconsistent in ITO films on different polymers. Furthermore, the band structures are calculated to make the substrate-dependent conductivity and optical properties more visually.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131672317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Controlling magnetization switching and DC transport properties of magnetic tunnel junctions by mircowave injection 微波注入控制磁隧道结的磁化开关和直流输运特性
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589370
Cheng Xin, Y. G. Liu, Lin Shi, Tian Yu, H. Naganuma, M. Oogane, Y. Ando
{"title":"Controlling magnetization switching and DC transport properties of magnetic tunnel junctions by mircowave injection","authors":"Cheng Xin, Y. G. Liu, Lin Shi, Tian Yu, H. Naganuma, M. Oogane, Y. Ando","doi":"10.1109/INEC.2016.7589370","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589370","url":null,"abstract":"Searching new approaches to combine spintronic devices and microwave applications is a fascinating topic. On one hand, the application of spintronic devices opens new roads to generate and detect microwave in wide frequency range, on the other hand, applying/injection microwave also modulates the spintronic devices properties. In this report, we present our recent work on effects of MW injection on the switching properties of magnetic tunneling junctions (MTJs). Magnetic tunneling junction is a promising device cell choice for spintronic applications, such as magnetic sensors, nonvolatile magnetic random access memories, and magnetic logical. As the MTJ cell size approaches to nanoscale, magnetic materials with large magnetic anisotropy are usually adopted as MTJ magnetic electrodes to keep the thermal stability. This usually inevitably increases magnetization switching field or spin transfer torque switching current density. Therefore, searching methods to assist MTJ magnetization switching becomes important for practical applications. Here, we show that directly injecting microwave current into MTJ and taking advantage of microwave current induced spin transfer torque (STT) effect can assist magnetization switching effectively. Since microwave current rather than MW magnetic field is utilized, it enables us to control the switching assistance electrically and eliminates cross-talking between neighboring cells.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"16 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114039694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analytical model of junctionless double gate radiation sensitive FET (RADFET) dosimeter 无结双栅辐射敏感场效应晶体管(RADFET)剂量计分析模型
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589328
Avashesh Dubey, Ajay, Mridula Gupta, R. Narang, M. Saxena
{"title":"Analytical model of junctionless double gate radiation sensitive FET (RADFET) dosimeter","authors":"Avashesh Dubey, Ajay, Mridula Gupta, R. Narang, M. Saxena","doi":"10.1109/INEC.2016.7589328","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589328","url":null,"abstract":"An Analytical model of Junctionless Double Gate Radiation sensitive FET (RADFET) is developed. From 2D Poisson equation using variable separation technique an analytical model is derived. This model is verified using ATLAS device simulation software. Further, the sensitivity of the JLDG RADFET is investigated and compared with Conventional DG RADFET.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115279895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical simulation of dean flow in spiral microchannels for cancer cell sorting 肿瘤细胞分选螺旋微通道内dean流动的数值模拟
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589400
Yunfei Dai, Peixian Li, Li Li, Jun Luo, Chengjun Huang
{"title":"Numerical simulation of dean flow in spiral microchannels for cancer cell sorting","authors":"Yunfei Dai, Peixian Li, Li Li, Jun Luo, Chengjun Huang","doi":"10.1109/INEC.2016.7589400","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589400","url":null,"abstract":"Dean flow in a spiral microchannel is simulated systematically using the set of Navier Stokes equations. The influence of fluid flow rate and spiral initial radius on Dean flow is discussed. The particals' motion under the Dean drag force in the spiral microchannel is shown in the last.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"212 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124177366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low-frequency oscillation evaluation modeling of functional brain activity potential 功能性脑活动电位低频振荡评价模型
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589462
Yaoxian Li, Xin Dong, Qiushi Li, Ting Li
{"title":"Low-frequency oscillation evaluation modeling of functional brain activity potential","authors":"Yaoxian Li, Xin Dong, Qiushi Li, Ting Li","doi":"10.1109/INEC.2016.7589462","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589462","url":null,"abstract":"The low-frequency oscillation (LFO) has been observed a positive or negative pike around 0.1 Hz, which is related to the specified brain function activities. Functional near-infrared spectroscopy (fNIRS) was used to simultaneously and noninvasively detect LFOs of multiple cerebral hemodynamics parameters. Based on local Fourier transform (LFT), we extract the amplitude of deoxy-Hb concentration signal at 0.1 Hz in the frequency domain and found a phenomenon which is correlated to that accuracy/respond time (accuracy/ RT) was stable when the deoxy-Hb concentration is at low level in the middle. Afterwards, we propose two feasible applications after doing some research: monitoring the fatigue driving level and evaluating the brain activity potential of human. This study observed LFOs in brain activities and showed a strong potential of LFOs in exploring brain functions.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121452408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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