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Ultrasound-aided spray casting for graphene oxide deposition 用于氧化石墨烯沉积的超声辅助喷涂铸造
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589459
Wentian Mi, Han-Yu Qi, Haiming Zhao, Yu-xing Li, Yi Yang, T. Ren
{"title":"Ultrasound-aided spray casting for graphene oxide deposition","authors":"Wentian Mi, Han-Yu Qi, Haiming Zhao, Yu-xing Li, Yi Yang, T. Ren","doi":"10.1109/INEC.2016.7589459","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589459","url":null,"abstract":"As one of the most promising material for the next generation of electronic devices, graphene has been one of the focused research topic in recent years. As an important way to obtain graphene, graphene oxide has received attention because of its simple and economic preparation method. However, the highly controllable graphene oxide deposition remains challenging yet. Here, a solution-based deposition method via ultrasound-aided spray casting is reported, which allows controllable deposition of graphene oxide thin films and makes graphene oxide potentially useful for a wide variety of devices incorporated in the large scale integrated circuit. In general, the deposition method introduced here could represent a route for translating the interesting fundamental properties of graphene oxide into technologically viable applications.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130991718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Sensitivity investigation of gate-all-around junctionless transistor for hydrogen gas detection 全栅无结晶体管氢气检测灵敏度研究
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589308
Yogesh Pratap, M. Kumar, Mridula Gupta, S. Haldar, R. Gupta, S. Deswal
{"title":"Sensitivity investigation of gate-all-around junctionless transistor for hydrogen gas detection","authors":"Yogesh Pratap, M. Kumar, Mridula Gupta, S. Haldar, R. Gupta, S. Deswal","doi":"10.1109/INEC.2016.7589308","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589308","url":null,"abstract":"In recent time, a MOSFET based gas sensor has been widely used for low cost and high sensitive sensor for a wide range of industrial and domestic applications. In this paper, a gate-all-around Gas-sensing Junctionless Nanowire Transistor (G-JNT) with catalytic metal gate i.e. palladium (Pd) is proposed for the first time for high sensitivity and low power hydrogen gas detection using ATLAS-3D device simulator. Shift in channel potential, subthreshold current and in threshold voltage is used to predict the response of the sensor. Impact of silicon pillar radius, gate oxide width and gate length on the sensitivity of G-JNT has been investigated in details. Results exhibit that junctionless Transistor with catalytic metal gate is the suitable candidate for hydrogen molecule detection.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114507685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Relevance between the oro-nasal thermistor signal's derivative and the nasal pressure transducer signal in airflow monitoring 气流监测中口鼻热敏电阻信号导数与鼻压力传感器信号的相关性
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589373
Lala Li, Jia Yan, Jiuxing Liang, Lin Sun, Yu-xi Luo
{"title":"Relevance between the oro-nasal thermistor signal's derivative and the nasal pressure transducer signal in airflow monitoring","authors":"Lala Li, Jia Yan, Jiuxing Liang, Lin Sun, Yu-xi Luo","doi":"10.1109/INEC.2016.7589373","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589373","url":null,"abstract":"Signals of an oro-nasal thermistor (Th) and a nasal air pressure transducer (NP) are widely used as surrogates of airflow for diagnosing sleep-disordered breathing, while the relationships between Th and NP were less discussed. To demonstrate the time derivative of Th is linear correlated with NP, a total of 15,053 epochs (defined 30-s as 1 epoch) clinical data were studied. The correlation coefficients between the time derivative of Th and NP in each epoch were calculated and its mean value is 0.87. It indicated that the time derivative of Th has a linear positive correlation with NP.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116041826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Homogeneous and heterogeneous integration of GaN-based light emitting diodes and driving transistors 基于氮化镓的发光二极管和驱动晶体管的均匀和非均匀集成
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589441
Z. Liu, K. Lau
{"title":"Homogeneous and heterogeneous integration of GaN-based light emitting diodes and driving transistors","authors":"Z. Liu, K. Lau","doi":"10.1109/INEC.2016.7589441","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589441","url":null,"abstract":"Before optoelectronic integrated circuits and systems can be produced in high volumes and at low cost it will be necessary to develop for them monolithic integration techniques which can be executed on full wafers and in multiwafer lots. Monolithic processes are also essential to achieving the highest speed and performance from optoelectronic integrated circuits and to insuring robustness and high mechanical reliability. Hybrid techniques can satisfy many near-term needs for optoelectronic integrated circuits, but they involve a great deal of piecework and assembly, thereby increasing cost, introducing performance-limiting parasitics, and decreasing ruggedness. It is monolithic, full-wafer, batch-level processing of monolithic integration that must be the ultimate goal of any program promoting the commercial use of optoelectronics to solve problems in computation, signal processing, data analysis, and sensing. Homogeneous integration of GaN-based high electron mobility transistors and light emitting diodes (HEMT-LEDs) have been attracting more and more attentions over the past years due to their wide application in displays, smart lighting, and high frequency switching applications such as visible light communications.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124011859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Magneto-optical enhancement in highly Poly-crystallized Ce substituted YIG thin films by PLD PLD在高多晶Ce取代YIG薄膜中的磁光增强研究
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589375
Y. Zhang, Jianliang Xie, L. Deng, L. Bi
{"title":"Magneto-optical enhancement in highly Poly-crystallized Ce substituted YIG thin films by PLD","authors":"Y. Zhang, Jianliang Xie, L. Deng, L. Bi","doi":"10.1109/INEC.2016.7589375","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589375","url":null,"abstract":"In this study, we used combinatorial pulsed laser deposition (PLD) method to deposit Ce:YIG thin films with high Ce concentration on silicon. Thin films with record high Ce concentrations of Ce<sub>1.3</sub>Y<sub>1.7</sub>Fe<sub>5</sub>O<sub>12</sub> were successfully grown on silicon, which showed about 3 fold enhancement of the Kerr rotation at 635 nm wavelength compared to previously reported Ce<sub>1</sub>Y<sub>2</sub>Fe<sub>5</sub>O<sub>12</sub>. Ce<sub>x</sub>Y<sub>3-x</sub>Fe<sub>5</sub>O<sub>12</sub> films with Ce concentration varying from 0.8 to x 1.4 were deposited on polycrystalline YIG thin film (60 nm) buffered Si substrates by PLD.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"25 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122120672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-low power consumption tunable photonic crystal nanobeam cavity based on suspended ridge waveguides 基于悬浮脊波导的超低功耗可调谐光子晶体纳米束腔
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589347
Yuguang Zhang, Yaocheng Shi
{"title":"Ultra-low power consumption tunable photonic crystal nanobeam cavity based on suspended ridge waveguides","authors":"Yuguang Zhang, Yaocheng Shi","doi":"10.1109/INEC.2016.7589347","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589347","url":null,"abstract":"We present the design of an ultra-low power consumption tunable photonic crystal (PhC) nanobeam cavity. The simulated temperature dependence of the PhC cavity is about 79 pm/K, due to the high thermo-optic coefficient of silicon. And the calculated tuning efficiency of the tunable PhC cavity is 45.8 pm/μW, which is the highest efficiency ever reported.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114989203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultracompact high-sensitivity biochemical sensor built with photonic crystal nanobeam cavity 基于光子晶体纳米束腔的超紧凑高灵敏度生化传感器
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589338
Yaocheng Shi
{"title":"Ultracompact high-sensitivity biochemical sensor built with photonic crystal nanobeam cavity","authors":"Yaocheng Shi","doi":"10.1109/INEC.2016.7589338","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589338","url":null,"abstract":"For the utilization as sensors, photonic crystal (PhC) cavities with strong light matter interaction between the optical fields and the analytes are preferred. However, there is a trade-off between sensitivity (S) and quality factor (Q): the optical mode should be distributed more into the target analytes to achieve a higher S; while in order to obtain a high Q, the confinement of the optical mode in the wave-guiding medium have to be large. We demonstrated ultracompact high-sensitivity biochemical sensors utilizing high-Q PhC nanobeam cavities.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115311708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of forward transient characteristics of vertical GaN-on-GaN p-n diodes 垂直GaN-on-GaN p-n二极管正向瞬态特性研究
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589466
M. Miao, J. Liou, B. Song, K. Nomoto, H. Xing, J. Salcedo, J. Hajjar
{"title":"Investigation of forward transient characteristics of vertical GaN-on-GaN p-n diodes","authors":"M. Miao, J. Liou, B. Song, K. Nomoto, H. Xing, J. Salcedo, J. Hajjar","doi":"10.1109/INEC.2016.7589466","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589466","url":null,"abstract":"Transient characteristics of vertical GaN diodes fabricated on bulk GaN substrates are investigated. When forward biasing the diodes using discrete pulses, the results yield quasi-static I-V curves with two different on-resistances and two turn-on stages. Transient waveforms measured at different voltages are then used to explain the observed behavior and underlying physics. A relatively large overshoot voltage is also observed at the very beginning of the transient voltage waveform, indicating that a relatively long time is required to transition the GaN diode from the high to low resistance state.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115370176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A silicon waveguide-coupled gold rod embedded microring resonator 一种硅波导耦合金棒嵌入微环谐振器
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589261
Zhipeng Qi, Guohua Hu, Yiping Cui
{"title":"A silicon waveguide-coupled gold rod embedded microring resonator","authors":"Zhipeng Qi, Guohua Hu, Yiping Cui","doi":"10.1109/INEC.2016.7589261","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589261","url":null,"abstract":"In this paper, we propose a resonator based on the integration of a gold rod (Au) embedded microring with silicon nanowire waveguides on a silicon-on-insulator (SOI) platform. The localized surface plasmons (LSPs) inside microring are excited by the Si waveguide transmitted TE mode in the wavelength range from 1.2 to 2μm. It is demonstrated that Fano resonance is enhanced by the coherent interference of the LSPs supported by the rod and the microring. Furthermore, the resonant wavelength and intensity can be modulated by the rotation of the Au rod inside microring. Such Fano resonator shows potential in applications for integrated optical modulating, sensing, and slow-light devices.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130066408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of the potocatalytic activity of semiconductors by using organic dyes 用有机染料评价半导体的光催化活性
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589407
Dainan Zhang, Yulong Liao, Jie Li, T. Wen, Yuanxun Li, L. Jia, Z. Zhong
{"title":"Evaluation of the potocatalytic activity of semiconductors by using organic dyes","authors":"Dainan Zhang, Yulong Liao, Jie Li, T. Wen, Yuanxun Li, L. Jia, Z. Zhong","doi":"10.1109/INEC.2016.7589407","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589407","url":null,"abstract":"In recent years, semiconductor materials have been widely studied as photocatalysts for the removal of organic and inorganic pollutants from water system. Their photocatalytic activities could be evaluated by various approaches, among which degradation of organic dyes is found a very effective and facile method. This study for this first time discusses a process about how to choose proper dye for a photocatalytic activity testing system.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"2015 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128700097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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