PLD在高多晶Ce取代YIG薄膜中的磁光增强研究

2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI:10.1109/INEC.2016.7589375

Y. Zhang, Jianliang Xie, L. Deng, L. Bi

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引用次数: 0

摘要

在本研究中，我们采用组合脉冲激光沉积(PLD)方法在硅上沉积了高浓度的Ce:YIG薄膜。Ce1.3Y1.7Fe5O12薄膜在硅上成功生长，其在635 nm波长处的克尔旋转比先前报道的Ce1Y2Fe5O12薄膜增强了约3倍。用PLD技术在多晶YIG薄膜(60 nm)缓冲的Si衬底上沉积了Ce浓度在0.8 ~ x 1.4之间的cey3 - xfe5o12薄膜。

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Magneto-optical enhancement in highly Poly-crystallized Ce substituted YIG thin films by PLD

In this study, we used combinatorial pulsed laser deposition (PLD) method to deposit Ce:YIG thin films with high Ce concentration on silicon. Thin films with record high Ce concentrations of Ce_1.3Y_1.7Fe₅O₁₂ were successfully grown on silicon, which showed about 3 fold enhancement of the Kerr rotation at 635 nm wavelength compared to previously reported Ce₁Y₂Fe₅O₁₂. Ce_xY_3-xFe₅O₁₂ films with Ce concentration varying from 0.8 to x 1.4 were deposited on polycrystalline YIG thin film (60 nm) buffered Si substrates by PLD.

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2016 IEEE International Nanoelectronics Conference (INEC)

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