一种新型的0.35 μm SiGe BiCMOS双晶闸管ESD保护结构

2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI:10.1109/INEC.2016.7589453

Hou Fei, Liu Nie, Liu Ji-zhi, Liu Zhiwei

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引用次数: 0

摘要

提出了一种在0.35 μm SiGe BiCMOS工艺中采用硅锗异质结双极晶体管(SiGe HBT)的新型双硅控整流器(SCR)。该设备包括两个背靠背的hbt和共享的子收集器。在每个HBT中，两个电阻与基极和发射极并联连接。为了提高保护能力，提出了一种多发射极指共用一个基极的布置方案。TLP测试结果证明了其ESD防护能力。

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A novel dual-SCR ESD protection structure in 0.35-μm SiGe BiCMOS process

This paper presents a novel dual silicon controlled rectifier (SCR) with silicon-germanium heterojunction bipolar transistor (SiGe HBT) in a 0.35-μm SiGe BiCMOS process. This device includes two back-to-back HBTs with shared sub-collector. Two resistors are connected parallel with base electrode and emitter electrode in each HBT. In order to enhance the protective ability, a layout of multiple emitter fingers shared with one common base are proposed. The TLP test results prove the ability of ESD protection.

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2016 IEEE International Nanoelectronics Conference (INEC)

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