无结双栅辐射敏感场效应晶体管(RADFET)剂量计分析模型

2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI:10.1109/INEC.2016.7589328

Avashesh Dubey, Ajay, Mridula Gupta, R. Narang, M. Saxena

{"title":"无结双栅辐射敏感场效应晶体管(RADFET)剂量计分析模型","authors":"Avashesh Dubey, Ajay, Mridula Gupta, R. Narang, M. Saxena","doi":"10.1109/INEC.2016.7589328","DOIUrl":null,"url":null,"abstract":"An Analytical model of Junctionless Double Gate Radiation sensitive FET (RADFET) is developed. From 2D Poisson equation using variable separation technique an analytical model is derived. This model is verified using ATLAS device simulation software. Further, the sensitivity of the JLDG RADFET is investigated and compared with Conventional DG RADFET.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analytical model of junctionless double gate radiation sensitive FET (RADFET) dosimeter\",\"authors\":\"Avashesh Dubey, Ajay, Mridula Gupta, R. Narang, M. Saxena\",\"doi\":\"10.1109/INEC.2016.7589328\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An Analytical model of Junctionless Double Gate Radiation sensitive FET (RADFET) is developed. From 2D Poisson equation using variable separation technique an analytical model is derived. This model is verified using ATLAS device simulation software. Further, the sensitivity of the JLDG RADFET is investigated and compared with Conventional DG RADFET.\",\"PeriodicalId\":416565,\"journal\":{\"name\":\"2016 IEEE International Nanoelectronics Conference (INEC)\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Nanoelectronics Conference (INEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INEC.2016.7589328\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2016.7589328","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

建立了一种无结双栅辐射敏感场效应管(RADFET)的解析模型。利用变量分离技术，从二维泊松方程出发，导出了一个解析模型。利用ATLAS设备仿真软件对该模型进行了验证。进一步研究了JLDG RADFET的灵敏度，并与传统的DG RADFET进行了比较。

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Analytical model of junctionless double gate radiation sensitive FET (RADFET) dosimeter

An Analytical model of Junctionless Double Gate Radiation sensitive FET (RADFET) is developed. From 2D Poisson equation using variable separation technique an analytical model is derived. This model is verified using ATLAS device simulation software. Further, the sensitivity of the JLDG RADFET is investigated and compared with Conventional DG RADFET.

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2016 IEEE International Nanoelectronics Conference (INEC)

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