ESD防护设计中传输线脉冲校正问题

Teruo Suzuki, Mitsuhiro Tomita, S. Tajima, Masaru Ito
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引用次数: 0

摘要

ESD保护参数的ESD (electrostatic Discharge)波形(以下简称RON)的倾斜程度与内芯电路的损坏程度密切相关。准确测量RON需要用传输线脉冲(TLP)进行稳定的短时间校准。特别是对于技术最先进的薄栅氧化晶体管的高精度ESD设计,需要TLP的高精度RON测量。在短暂的校准过程中,我们发现封装样品和集成电路(IC)插座之间的接触电阻随校准电流而变化。扫描电子显微镜(SEM)对接触面进行了分析。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Calibration problem of Transmission Line Pulse for ESD protection design
The degree of leaning of the Electro-Static Discharge (ESD) wave form (hereinafter referred as RON) of ESD protection parameters is closely related to the internal core circuit damage. Accurate measurement of RON requires stable short calibration with Transmission Line Pulse (TLP). In particular, for the high-precision ESD design of the thin gate oxide transistor in the most advanced technology, the high accuracy RON measurement of TLP is required. During short calibration, we found the contact resistance between the packaged sample and integrated circuit (IC) socket varied depending on the calibration current. Scanning Electron Microscope (SEM) analysis of contacts made it clear.
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