An inductive peaking technology for high-speed MIPI receiver bandwidth expanding in a 90 nm CMOS process

Abstract

An inductive peaking technology is proposed in this paper for improving receiver bandwidth. A N/PMOS cross biasing active inductor and negative Miller capacitance are introduced to provide inductive peaking around the amplifier bandwidth. According to the simulation and experimental results within a MIPI receiver under 1.2V CMOS 90nm process, the inductive peaking technology increases the bandwidth of the preamplifier in the MIPI PHY circuit from 1.05GHz to 2.09GHz. As a results, the PHY circuit which employs the inductive peaking amplifier consumes only 4mW power for transferring 1Gbps data signal with 70mV differential amplitude to 1.2V CMOS level.