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2016 IEEE International Nanoelectronics Conference (INEC)最新文献

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Novel GaP/GaNP core/shell nanowires for optoelectronics and photonics 光电子和光子学用新型GaP/GaNP核/壳纳米线
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589413
I. Buyanova, J. Stehr, S. Filippov, W. M. Chen, C. Tu
{"title":"Novel GaP/GaNP core/shell nanowires for optoelectronics and photonics","authors":"I. Buyanova, J. Stehr, S. Filippov, W. M. Chen, C. Tu","doi":"10.1109/INEC.2016.7589413","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589413","url":null,"abstract":"GaNP-based nanowires (NWs) represent a novel material system that has a great potential in a variety of optoelectronic and photonic applications. In this paper we review our recent results showing that advantages provided by alloying with nitrogen can be realized and even further enhanced in novel coaxial GaNP NWs grown on Si substrates. Based on combined μ-photoluminescence and optically detected magnetic resonance measurements, we identify the optimum structural design of these nanowires. We also demonstrate that these novel structures have potential as nanoscale light sources of linearly polarized light.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"209 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133600240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of double peak voltage in pulse quenching effect on the single-event transient 双峰电压脉冲淬火对单事件暂态影响的研究
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589275
Luo Sheng, He Wei, Zhang Zhun, He Lingxian, C. Jianmin, Wu Qingyang
{"title":"Investigation of double peak voltage in pulse quenching effect on the single-event transient","authors":"Luo Sheng, He Wei, Zhang Zhun, He Lingxian, C. Jianmin, Wu Qingyang","doi":"10.1109/INEC.2016.7589275","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589275","url":null,"abstract":"Pulse quenching is evaluate at device-level. Simulation results present that unsynchronized flipping time of adjacent pMOS causing by overmuch distance of adjacent pMOS leads to double peak voltage.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115494977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Magnetic properties of [FeCo-O/NiZn-Ferrite]n bi-magnetic phase nanocomposite multilayer films [feo - o / nizn -铁氧体]n双磁相纳米复合多层膜的磁性能
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589391
B. B. Yuan, X. L. Liu, L. Wang, D. Peng, J. M. Wei, J. Wang
{"title":"Magnetic properties of [FeCo-O/NiZn-Ferrite]n bi-magnetic phase nanocomposite multilayer films","authors":"B. B. Yuan, X. L. Liu, L. Wang, D. Peng, J. M. Wei, J. Wang","doi":"10.1109/INEC.2016.7589391","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589391","url":null,"abstract":"[FeCo-O/NiZn-Ferrite]n multilayer films with different thicknesses of FeCo-O and NiZn-Ferrite layer were fabricated by alternant magnetron sputtering at room temperature with no external magnetic field applied. The effect of monolayer thickness on magnetic and high frequency characteristics was systematically investigated. The multilayer thin film could acquire excellent high-frequency properties and high resistivity when the thickness of FeCo-O layer and NiZn-Ferrite layer was 2nm and 2.1nm respectively, which makes these multilayer films great candidates as magnetic core for microinductor.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"193 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114748862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Multimode silicon photonics integrated devices 多模硅光子集成器件
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589358
D. Dai, Ke Ma
{"title":"Multimode silicon photonics integrated devices","authors":"D. Dai, Ke Ma","doi":"10.1109/INEC.2016.7589358","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589358","url":null,"abstract":"Mode-division-multiplexing (MDM) technology has attracted much attention because of the potential to enhance the capacity of an optical-interconnect link for a single wavelength carrier. In this case, one should consider not only the fundamental mode but also the higher-order modes for the design of photonic integrated devices, and thus some novel devices are required. As silicon photonics has become very popular because of their CMOS compatibility, it is interesting to develop some multimode photonic integrated devices on silicon. This paper gives a review on multimode silicon photonics.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114769501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Methods to obtain the inverse spin hall effect voltage in permalloy/normal metal bilayer 方法获得坡莫合金/正常金属双分子层的反自旋霍尔效应电压
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589376
Qiurun Wang, Ting Wu, F. Han, B. Peng, Wanli Zhang, Wenxu Zhang
{"title":"Methods to obtain the inverse spin hall effect voltage in permalloy/normal metal bilayer","authors":"Qiurun Wang, Ting Wu, F. Han, B. Peng, Wanli Zhang, Wenxu Zhang","doi":"10.1109/INEC.2016.7589376","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589376","url":null,"abstract":"In this work, the inverse spin Hall effect was separated from the spin rectification effect by two methods. One is originated from that the inverse spin Hall effect which is an odd function of the spin injection direction while the spin rectification effect is independent on it. The second method is based on the relation between the direction of static magnetic field and the symmetric and anti-symmetric components of voltage.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116353477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tuning the strain and physical properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal substrates 在邻近衬底上调整高外延cuu3ti4o12薄膜的应变和物理性能
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589290
Guang Yao, M. Gao, Yuan Lin
{"title":"Tuning the strain and physical properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal substrates","authors":"Guang Yao, M. Gao, Yuan Lin","doi":"10.1109/INEC.2016.7589290","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589290","url":null,"abstract":"Epitaxial thin films of perovskite-like structural CaCu3Ti4O12 (CCTO) were grown on vicinal (001) single-crystal LaAlCb (LAO) substrates to investigate the evolution of micro structure and dielectric properties of the films with the mismatch strain induced by surface step terrace. The different surface terrace width of the substrates produced by various miscut angles of 1.0°, 2.5°, and 5.0° along [110] direction successfully tuned the lattice structure, which were confirmed by X-ray diffraction. A model is proposed that the substrate step terrace dimensions on each vicinal LAO substrate can be tuned by miscutting angles, which introduces compressive and tensile strained domains of the CCTO film and further affect the dielectric properties. Based on this growth mode, we can achieve high dielectric constant and reduce the dielectric loss by a proper design of the miscutting angles.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121997612","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation on the amplitude distribution of random telegraph noise (RTN) in nanoscale MOS devices 纳米MOS器件中随机电报噪声(RTN)振幅分布的研究
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589332
Zexuan Zhang, Shaofeng Guo, Xiaobo Jiang, Runsheng Wang, Ru Huang, Jibin Zou
{"title":"Investigation on the amplitude distribution of random telegraph noise (RTN) in nanoscale MOS devices","authors":"Zexuan Zhang, Shaofeng Guo, Xiaobo Jiang, Runsheng Wang, Ru Huang, Jibin Zou","doi":"10.1109/INEC.2016.7589332","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589332","url":null,"abstract":"In this paper, the amplitude (ΔId/Id) distribution of random telegraph noise (RTN) induced by each trap in nanoscale devices is investigated based on the statistical experimental results. The RTN states are extracted through the proposed Gaussian mixture model (GMM). Mont-Carlo simulation is performed to extract the most probable results for mean trap number and each RTN amplitude. The results show that the RTN amplitude distribution is well consistent with the lognormal distribution instead of the exponential distribution for both the DC and AC results, which is helpful for future robust digital circuit design against RTN.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128297356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A 12 Bit 500MS/S SHA-less ADC in 0.18um CMOS 一个12位500MS/S无sha ADC在0.18um CMOS
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589282
L. Li, Mingyuan Xu, Xingfa Huang, X. Shen, D. Fu, Xi Chen, Pujie
{"title":"A 12 Bit 500MS/S SHA-less ADC in 0.18um CMOS","authors":"L. Li, Mingyuan Xu, Xingfa Huang, X. Shen, D. Fu, Xi Chen, Pujie","doi":"10.1109/INEC.2016.7589282","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589282","url":null,"abstract":"In this paper, a 12 bit 500MS/s SHA-less ADC is described. The ADC has an integrated input buffer with a new linearization technique that improves its distortion. Eight pipeline stages with fully differential switched capacitor architecture follow the input buffer. Each of stage of the pipeline, excluding the last, consists of a low resolution flash ADC connected to a switched capacitor DAC and interstage residue amplifier(MDAC). A 0.18pm CMOS process with 3.3V/1.8V analog power supply is used in the design. This ADC achieves an SNR of 65dB and an SFDR of 82dB for sampling analog input frequencies up to 250MHz.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127314042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Organic-inorganic hybrid spin valves with different organic spacers 具有不同有机垫片的有机-无机混合自旋阀
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589306
Xianmin Zhang, Han Bao, Jiaxin Lin, G. Qin
{"title":"Organic-inorganic hybrid spin valves with different organic spacers","authors":"Xianmin Zhang, Han Bao, Jiaxin Lin, G. Qin","doi":"10.1109/INEC.2016.7589306","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589306","url":null,"abstract":"A series of novel organic spin valve devices with a Fe3O4/Al-O/organic semiconductors (OSs)/Co/Al stacking structure was fabricated. Here, four kinds of OSs, Poly(vinylidene fluoride) (PVDF), rubrene, C60 and Alq3 were tested in the devices. The spin-dependent transport properties and magnetoresistance (MR) effect were systemically studied. Giant MR ratio over 8% was observed at 300 K in C60-based spin valves, which is one of the highest MR ratios reported so far. Moreover, a large SDT length of over 100 nm was experimentally observed in the C60 layer at room temperature. Tunneling MR ratio was achieved over 6% in rubrene and Alq3 based spin valves at room temperature. It is noted that the tunneling MR ratios at room temperature are around 2% for devices with 3 layers of PVDF. The relations between OSs spacer and MR effect were discussed.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129986541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Compared current-voltage characteristics of silicon and cubic silicon caibine pn-junction based on the silicon substrate 比较了基于硅衬底的硅和立方硅格子pn结的电流电压特性
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589377
Zhi Yang, Yao Ma, Yun Li, Xin Zhao, M. Gong
{"title":"Compared current-voltage characteristics of silicon and cubic silicon caibine pn-junction based on the silicon substrate","authors":"Zhi Yang, Yao Ma, Yun Li, Xin Zhao, M. Gong","doi":"10.1109/INEC.2016.7589377","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589377","url":null,"abstract":"Cubic silicon carbide pn junction was synthesized on Silicon substrate by Low pressure chemical vapor deposition. The methane diluted with Hydrogen was used as the reaction carbon source, while silicon substrate was used as the silicon source. The cubic silicon carbide films were characterized by X-ray diffraction, high resolution transmission electron microscopy and current-voltage. It is found that the threshold voltage of cubic silicon carbide is bigger than Si pn junction and the electronic characteristics of cubic silicon carbide pn junction is quite insensitive to ultraviolet light.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129991340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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