方法获得坡莫合金/正常金属双分子层的反自旋霍尔效应电压

2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI:10.1109/INEC.2016.7589376

Qiurun Wang, Ting Wu, F. Han, B. Peng, Wanli Zhang, Wenxu Zhang

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引用次数: 0

摘要

本文采用两种方法将逆自旋霍尔效应与自旋整流效应分离开来。一是由于逆自旋霍尔效应是自旋注入方向的奇函数，而自旋整流效应与之无关。第二种方法是基于静磁场方向与电压的对称分量和反对称分量之间的关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Methods to obtain the inverse spin hall effect voltage in permalloy/normal metal bilayer

In this work, the inverse spin Hall effect was separated from the spin rectification effect by two methods. One is originated from that the inverse spin Hall effect which is an odd function of the spin injection direction while the spin rectification effect is independent on it. The second method is based on the relation between the direction of static magnetic field and the symmetric and anti-symmetric components of voltage.

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2016 IEEE International Nanoelectronics Conference (INEC)

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