光电子和光子学用新型GaP/GaNP核/壳纳米线

I. Buyanova, J. Stehr, S. Filippov, W. M. Chen, C. Tu
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引用次数: 0

摘要

基于ganp的纳米线代表了一种新型材料体系,在各种光电和光子应用中具有巨大的潜力。在本文中,我们回顾了我们最近的研究结果,表明在Si衬底上生长的新型同轴GaNP NWs可以实现甚至进一步增强氮合金化所提供的优势。基于μ光致发光和光学检测磁共振相结合的测量,我们确定了这些纳米线的最佳结构设计。我们还证明了这些新结构具有作为线偏振光纳米级光源的潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Novel GaP/GaNP core/shell nanowires for optoelectronics and photonics
GaNP-based nanowires (NWs) represent a novel material system that has a great potential in a variety of optoelectronic and photonic applications. In this paper we review our recent results showing that advantages provided by alloying with nitrogen can be realized and even further enhanced in novel coaxial GaNP NWs grown on Si substrates. Based on combined μ-photoluminescence and optically detected magnetic resonance measurements, we identify the optimum structural design of these nanowires. We also demonstrate that these novel structures have potential as nanoscale light sources of linearly polarized light.
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