Investigation of double peak voltage in pulse quenching effect on the single-event transient

2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI:10.1109/INEC.2016.7589275

Luo Sheng, He Wei, Zhang Zhun, He Lingxian, C. Jianmin, Wu Qingyang

引用次数: 2

Abstract

Pulse quenching is evaluate at device-level. Simulation results present that unsynchronized flipping time of adjacent pMOS causing by overmuch distance of adjacent pMOS leads to double peak voltage.

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双峰电压脉冲淬火对单事件暂态影响的研究

脉冲淬火在设备级进行评估。仿真结果表明，相邻pMOS距离过长导致相邻pMOS翻转时间不同步，导致电压出现双峰。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 IEEE International Nanoelectronics Conference (INEC)

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