Qiurun Wang, Ting Wu, F. Han, B. Peng, Wanli Zhang, Wenxu Zhang
{"title":"Methods to obtain the inverse spin hall effect voltage in permalloy/normal metal bilayer","authors":"Qiurun Wang, Ting Wu, F. Han, B. Peng, Wanli Zhang, Wenxu Zhang","doi":"10.1109/INEC.2016.7589376","DOIUrl":null,"url":null,"abstract":"In this work, the inverse spin Hall effect was separated from the spin rectification effect by two methods. One is originated from that the inverse spin Hall effect which is an odd function of the spin injection direction while the spin rectification effect is independent on it. The second method is based on the relation between the direction of static magnetic field and the symmetric and anti-symmetric components of voltage.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2016.7589376","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, the inverse spin Hall effect was separated from the spin rectification effect by two methods. One is originated from that the inverse spin Hall effect which is an odd function of the spin injection direction while the spin rectification effect is independent on it. The second method is based on the relation between the direction of static magnetic field and the symmetric and anti-symmetric components of voltage.