在邻近衬底上调整高外延cuu3ti4o12薄膜的应变和物理性能

Guang Yao, M. Gao, Yuan Lin
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引用次数: 0

摘要

在相邻(001)单晶LaAlCb (LAO)衬底上生长具有钙钛矿样结构的CaCu3Ti4O12 (CCTO)外延薄膜,研究了表面台阶台阶引起的失配应变对薄膜微观结构和介电性能的影响。x射线衍射证实了沿[110]方向1.0°、2.5°和5.0°的错切角度所产生的衬底表面台阶宽度的不同,成功地调整了晶格结构。提出了一种模型,认为相邻的LAO衬底上的衬底台阶尺寸可以通过误切角度来调整,这将引入CCTO薄膜的压缩和拉伸应变域,从而进一步影响CCTO薄膜的介电性能。基于这种生长方式,通过合理设计错切角,可以获得较高的介电常数,降低介电损耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Tuning the strain and physical properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal substrates
Epitaxial thin films of perovskite-like structural CaCu3Ti4O12 (CCTO) were grown on vicinal (001) single-crystal LaAlCb (LAO) substrates to investigate the evolution of micro structure and dielectric properties of the films with the mismatch strain induced by surface step terrace. The different surface terrace width of the substrates produced by various miscut angles of 1.0°, 2.5°, and 5.0° along [110] direction successfully tuned the lattice structure, which were confirmed by X-ray diffraction. A model is proposed that the substrate step terrace dimensions on each vicinal LAO substrate can be tuned by miscutting angles, which introduces compressive and tensile strained domains of the CCTO film and further affect the dielectric properties. Based on this growth mode, we can achieve high dielectric constant and reduce the dielectric loss by a proper design of the miscutting angles.
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