Luo Sheng, He Wei, Zhang Zhun, He Lingxian, C. Jianmin, Wu Qingyang
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Investigation of double peak voltage in pulse quenching effect on the single-event transient
Pulse quenching is evaluate at device-level. Simulation results present that unsynchronized flipping time of adjacent pMOS causing by overmuch distance of adjacent pMOS leads to double peak voltage.
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