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2016 IEEE International Nanoelectronics Conference (INEC)最新文献

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Resistive switching characteristics of RRAM devices based on spin-coated a-IGZO thin films and ink-jet printed Ag electrodes 基于自旋涂覆a-IGZO薄膜和喷墨印刷Ag电极的RRAM器件的电阻开关特性
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589317
Z. Chen, Z. Liu, W. Ma, Y. Shen, H. Zhang, T. P. Chen
{"title":"Resistive switching characteristics of RRAM devices based on spin-coated a-IGZO thin films and ink-jet printed Ag electrodes","authors":"Z. Chen, Z. Liu, W. Ma, Y. Shen, H. Zhang, T. P. Chen","doi":"10.1109/INEC.2016.7589317","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589317","url":null,"abstract":"In this work, memory devices with Ag/a-IGZO/ITO structures were fabricated mainly based on solution-based synthesis approaches. Specifically, the IGZO thin film was prepared by spin coating of IGZO ink and the top Ag electrodes were formed by ink-jet printing. Electrical measurements showed that Roff/Ron ratio was over two orders and the device resistance and could be maintained up to 105s without degradation.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122679405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
100nm Gate length enhancement-mode In0.4Ga0.6As MOSFETs with InGaP interfacial layer and Al2O3 as gate oxide 以InGaP界面层和Al2O3为栅极氧化物的100nm栅极长度增强模式In0.4Ga0.6As mosfet
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589327
H. Chang, B. Sun, Z. Gong, J. Niu, S. K. Wang, H. Liu
{"title":"100nm Gate length enhancement-mode In0.4Ga0.6As MOSFETs with InGaP interfacial layer and Al2O3 as gate oxide","authors":"H. Chang, B. Sun, Z. Gong, J. Niu, S. K. Wang, H. Liu","doi":"10.1109/INEC.2016.7589327","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589327","url":null,"abstract":"An enhancement-mode implant-free In0.4Ga0.6As metal oxide semiconductor field effect transistors (MOSFETs) on GaAs substrate is demonstrated. The device features atomic layer deposition (ALD) 8 nm Al2O3 gate oxide layer on 5 nm InGaP interfacial layer and is fabricated on GaAs substrate. Devices with 100 nm gate-length exhibit a threshold voltage of 0.72 V, an extrinsic transconductance of 170 mS/mm, and a saturation drain current of 250 mA/mm. The current gain cutoff frequency, fT, and the maximum frequency of oscillation, fmax, of 79 GHz and 180 GHz were obtained, respectively. This work suggests that InGaAs MOSFETs with InGaP interfacial layer on GaAs can be used in single power supply RF applications.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122892658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A novel and reliable patterning technology with nickel foil on curved surfaces 一种新颖可靠的曲面镍箔制模技术
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589455
Kaifeng Wu, Xuhan Dai, Mengyuan Zhao, Hong Wang, G. Ding
{"title":"A novel and reliable patterning technology with nickel foil on curved surfaces","authors":"Kaifeng Wu, Xuhan Dai, Mengyuan Zhao, Hong Wang, G. Ding","doi":"10.1109/INEC.2016.7589455","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589455","url":null,"abstract":"A new fabrication technology utilizing the nickel foil as the flexible mask for the non-planar surface patterning is presented. Compared with the traditional patterning on the planar substrates, the versatile micro-fabrication method based on the re-usable nickel membrane mask, has patterned on the curve surface. We shape the pattern in the nickel foil by the laser cutting. It allow for fabrication on a wide range of substrates, enabling feature line widths down to 50 μm. The nickel foil masks, gaining reconversion as force is removed, can be wrapped precisely on the targeted curve substrate.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114427640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Vapor-phase self-assembled monolayer on SU-8 cantilever for explosive sensing 用于爆炸传感的SU-8悬臂梁气相自组装单层
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589293
Tejas R. Naik, Swapnil Pandey, Vijay S. Palaparthy, Rohan S. Shelar, V. Rao, M. Ravikanth
{"title":"Vapor-phase self-assembled monolayer on SU-8 cantilever for explosive sensing","authors":"Tejas R. Naik, Swapnil Pandey, Vijay S. Palaparthy, Rohan S. Shelar, V. Rao, M. Ravikanth","doi":"10.1109/INEC.2016.7589293","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589293","url":null,"abstract":"This paper reports novel technique of coating SU-8 cantilevers with self-assembled monolayer of Zinc porphyrin in vapor phase. Porphyrins have been reported to be effective for explosive detection, though incorporation of its thin films on polymer cantilevers is difficult due to harsh solvents of porphyrin which damage the polymer layers like SU-8. Hence a nondamaging process which is also industry friendly and useful for mass production is required. The vapor phase technique developed here to deposit self-assembled monolayers (VPSAM) of Porphyrins is a MEMS/CMOS compatible process which opens up a whole new set of opportunities. In this paper, we discuss the process of VPSAM and show its application in explosive detection of nitro-based explosives (PETN, RDX, TNT).","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"208 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121888678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Studies on polymer capped quantum dots and peptide self-assembly using fluorescence coupled capillary electrophoresis 荧光耦合毛细管电泳技术研究高分子包封量子点及肽段自组装
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589390
Jie Fan, Li Liu, Shumin Ding, M. Fu, Feifei Liu, Chencheng Zhang, Hao Wu, Jianhao Wang, Yuqin Qin
{"title":"Studies on polymer capped quantum dots and peptide self-assembly using fluorescence coupled capillary electrophoresis","authors":"Jie Fan, Li Liu, Shumin Ding, M. Fu, Feifei Liu, Chencheng Zhang, Hao Wu, Jianhao Wang, Yuqin Qin","doi":"10.1109/INEC.2016.7589390","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589390","url":null,"abstract":"A new bioprobe was designed to study the quantum dots (QDs) based bioanalysis. Then, fluorescence coupled capillary electrophoresis (CE-FL) was utilized to probe the self-assembly of a bifunctional polymer (PAA-g-MEA) capped QDs and ATTO labeled peptide (ATTO-EA5H6). Fluorescence resonance energy transfer (FRET) was detected readily by CE-FL. The FRET signal increased with ATTO-EA5H6/QD molar ratio, which plateaued at 4:1.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124572122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Giant figure of merit (ZT) of Ge2Sb2Te5 thin films through the control of crystal structure 通过晶体结构控制Ge2Sb2Te5薄膜的巨优值(ZT)
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589404
So-Hyeon Kang, S. Pammi, Sang‐Kwon Lee, Soon-Gil Yoon
{"title":"Giant figure of merit (ZT) of Ge2Sb2Te5 thin films through the control of crystal structure","authors":"So-Hyeon Kang, S. Pammi, Sang‐Kwon Lee, Soon-Gil Yoon","doi":"10.1109/INEC.2016.7589404","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589404","url":null,"abstract":"300nm-thick Ge2Sb2Te5 Thin Films were prepared using RF sputtering with different deposition temperatures. Thermoelectric properties of GST thin films were measured at room temperature including the Seebeck coefficient, the electrical conductivity and thermal conductivity. The highest power factor (1.1 × 10-3 W/K2m) was shown in the GST film deposited at 250°C, which has the mixture phases of FCC and HCP structure. And the moderate degree of electrical conductivity and the Seebeck coefficient in the GST film deposited at 250°C lead to the highest ZT value of nearly 2.0. In order to explain giant ZT value, the crystal structure, the electrical parameters and the chemical composition were investigated.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129642065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Current enhanced double-gate TFET with source pocket and asymmetric gate oxide 具有源口袋和非对称栅极氧化物的电流增强双栅极TFET
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589410
Zhonghua Yu, Yunpeng Dong, Xinnan Lin, Lining Zhang
{"title":"Current enhanced double-gate TFET with source pocket and asymmetric gate oxide","authors":"Zhonghua Yu, Yunpeng Dong, Xinnan Lin, Lining Zhang","doi":"10.1109/INEC.2016.7589410","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589410","url":null,"abstract":"In this paper, asymmetric gate oxide and source pocket double-gate tunneling FET (DG TFET) structure is proposed to enhance the current drive. Compared with conventional DG-TFET, the proposed TFET has steeper average subthreshold swing (SS), larger on currents, smaller supply voltage. The reason of improvements is mainly attributed to the enhanced tunneling electric field high-k gate oxide brings and larger tunneling area caused by the source pocket.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121154844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A low miller capacitance VDMOS with shield gate and oxide trench 具有屏蔽栅和氧化沟槽的低米勒电容VDMOS
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589361
M. Ren, Zhe Chen, Bo Niu, Xiaofeng Cao, Shuangyue Li, Zehong Li, Bo Zhang
{"title":"A low miller capacitance VDMOS with shield gate and oxide trench","authors":"M. Ren, Zhe Chen, Bo Niu, Xiaofeng Cao, Shuangyue Li, Zehong Li, Bo Zhang","doi":"10.1109/INEC.2016.7589361","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589361","url":null,"abstract":"A novel structure was proposed to improve the Miller capacitance Cgd of VDMOS. The gate of conventional VDMOS is split into the control gate and the shield gate in the new structure. Moreover, a trench filled with oxide is introduced in the surface of semiconductor under the shield gate. According to the simulation, the new structure reduced Cgd by 31% compared with the conventional one, almost without degradation of the specific on-resistance (Rsp, on) and breakdown voltage (BV).","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121168212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Design and reliability analysis of a novel detector for monitoring spine disease 一种新型脊柱疾病监测检测器的设计与可靠性分析
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589313
Ting Li, Yu-Ying Su
{"title":"Design and reliability analysis of a novel detector for monitoring spine disease","authors":"Ting Li, Yu-Ying Su","doi":"10.1109/INEC.2016.7589313","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589313","url":null,"abstract":"We reported the design of spine detector, which was based on near infrared spectrum technology. Then we performed series of experiments to fully test its reliabilities, including the sensitivity, stability, and etc. The results showed that this instrument was very reliable, sensitive, and stabile, which supported the promising clinical use of our novel device in spine health monitoring and diagnose.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121525023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Highly stretchable, sensitive and flexible strain sensors based on MWCNTs fabriated by different methods 采用不同方法制备的基于MWCNTs的高拉伸、高灵敏度和高柔性应变传感器
2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI: 10.1109/INEC.2016.7589286
Saeed Ahmed Khan, M. Gao, Yuechang Zhu, Zhuocheng Yan, Yuan Lin
{"title":"Highly stretchable, sensitive and flexible strain sensors based on MWCNTs fabriated by different methods","authors":"Saeed Ahmed Khan, M. Gao, Yuechang Zhu, Zhuocheng Yan, Yuan Lin","doi":"10.1109/INEC.2016.7589286","DOIUrl":"https://doi.org/10.1109/INEC.2016.7589286","url":null,"abstract":"Three samples of strain sensors have been fabricated and presented in this paper with different methods. First sample was made by spray coating of MWCNTs on poly-dimethylsiloxane (PDMS) substrate; second sample was by depositing of 0.3 wt% of MWCNTs powder on PDMS substrate at 100°C and third sample was fabricated by CVD method to grow MWCNTs array on SiO2 substrate. It revealed from experiment results that strain sensor fabricated by spray coating method showed high sensitivity with tunability from 3.25-19.17 %, high stretchability of 60 %, good linearity and excellent long time stability.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130713388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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