Current enhanced double-gate TFET with source pocket and asymmetric gate oxide

Abstract

In this paper, asymmetric gate oxide and source pocket double-gate tunneling FET (DG TFET) structure is proposed to enhance the current drive. Compared with conventional DG-TFET, the proposed TFET has steeper average subthreshold swing (SS), larger on currents, smaller supply voltage. The reason of improvements is mainly attributed to the enhanced tunneling electric field high-k gate oxide brings and larger tunneling area caused by the source pocket.