基于自旋涂覆a-IGZO薄膜和喷墨印刷Ag电极的RRAM器件的电阻开关特性

2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI:10.1109/INEC.2016.7589317

Z. Chen, Z. Liu, W. Ma, Y. Shen, H. Zhang, T. P. Chen

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引用次数: 1

摘要

在这项工作中，主要基于基于溶液的合成方法制备了具有Ag/a-IGZO/ITO结构的存储器件。其中，采用IGZO油墨自旋镀膜的方法制备了IGZO薄膜，并采用喷墨打印的方法形成了顶部Ag电极。电气测量表明，Roff/Ron比超过两个数量级，器件电阻可以维持105秒而不会退化。

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Resistive switching characteristics of RRAM devices based on spin-coated a-IGZO thin films and ink-jet printed Ag electrodes

In this work, memory devices with Ag/a-IGZO/ITO structures were fabricated mainly based on solution-based synthesis approaches. Specifically, the IGZO thin film was prepared by spin coating of IGZO ink and the top Ag electrodes were formed by ink-jet printing. Electrical measurements showed that Roff/Ron ratio was over two orders and the device resistance and could be maintained up to 105s without degradation.

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2016 IEEE International Nanoelectronics Conference (INEC)

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