具有源口袋和非对称栅极氧化物的电流增强双栅极TFET

2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI:10.1109/INEC.2016.7589410

Zhonghua Yu, Yunpeng Dong, Xinnan Lin, Lining Zhang

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引用次数: 6

摘要

本文提出了非对称栅极氧化物和源袋双栅隧道效应场效应晶体管(DG - TFET)结构来增强电流驱动。与传统的DG-TFET相比，该晶体管具有更陡的平均亚阈值摆幅(SS)、更大的输出电流和更小的电源电压。改善的原因主要是高k栅极氧化物带来的隧穿电场增强和源袋导致的隧穿面积增大。

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Current enhanced double-gate TFET with source pocket and asymmetric gate oxide

In this paper, asymmetric gate oxide and source pocket double-gate tunneling FET (DG TFET) structure is proposed to enhance the current drive. Compared with conventional DG-TFET, the proposed TFET has steeper average subthreshold swing (SS), larger on currents, smaller supply voltage. The reason of improvements is mainly attributed to the enhanced tunneling electric field high-k gate oxide brings and larger tunneling area caused by the source pocket.

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2016 IEEE International Nanoelectronics Conference (INEC)

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