An HfO2-based resistive switching memory device with good anti-radiation capability

Abstract

Electrical characteristics of an HfO2-based resistive switching memory device are investigated before and after exposure to γ ray radiation for various total ionizing doses (TIDs). The device can still function properly after radiation, showing a good anti-radiation capability. After exposure to radiation, the set and reset voltages of the device decrease very slightly, and the resistance of the low-resistance state and the high-resistance state shows little increase. The very small changes of set voltage, reset voltage and resistance after radiation do not influence the proper function of the device. The γ ray radiation does not significantly degrade both retention and endurance characteristics even after a high-TID exposure.