相变存储器的场致阈值开关模型

2016 IEEE International Nanoelectronics Conference (INEC) Pub Date : 2016-05-09 DOI:10.1109/INEC.2016.7589445

Yiqun Wei, Xinnan Lin

{"title":"相变存储器的场致阈值开关模型","authors":"Yiqun Wei, Xinnan Lin","doi":"10.1109/INEC.2016.7589445","DOIUrl":null,"url":null,"abstract":"This work presents a field-induced threshold switching model of phase-change memory, which combines the field-induced hopping transport mechanism and trap to band excitation mechanism to establish the conductivity model coupled with the electric field. Based on this model, the dependencies with scaling for switching characteristics are studied. The results show a good consistence with the measurements.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"206 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A field-induced threshold switching model of phase-change memory\",\"authors\":\"Yiqun Wei, Xinnan Lin\",\"doi\":\"10.1109/INEC.2016.7589445\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents a field-induced threshold switching model of phase-change memory, which combines the field-induced hopping transport mechanism and trap to band excitation mechanism to establish the conductivity model coupled with the electric field. Based on this model, the dependencies with scaling for switching characteristics are studied. The results show a good consistence with the measurements.\",\"PeriodicalId\":416565,\"journal\":{\"name\":\"2016 IEEE International Nanoelectronics Conference (INEC)\",\"volume\":\"206 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Nanoelectronics Conference (INEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INEC.2016.7589445\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2016.7589445","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文提出了相变存储器的场致阈值开关模型，该模型结合了场致跳输运机制和陷阱到带激发机制，建立了与电场耦合的电导率模型。在此模型的基础上，研究了开关特性与尺度的依赖关系。计算结果与测量值吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A field-induced threshold switching model of phase-change memory

This work presents a field-induced threshold switching model of phase-change memory, which combines the field-induced hopping transport mechanism and trap to band excitation mechanism to establish the conductivity model coupled with the electric field. Based on this model, the dependencies with scaling for switching characteristics are studied. The results show a good consistence with the measurements.

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2016 IEEE International Nanoelectronics Conference (INEC)

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