{"title":"基于绝缘体上硅平台的多模干扰隔离器","authors":"Keyi Shui, L. Deng, L. Bi","doi":"10.1109/INEC.2016.7589288","DOIUrl":null,"url":null,"abstract":"This paper presents the design of a multimode interference(MMI) based optical isolator on Silicon-On-Insulator (SOI) structure, by using the magneto-optical (MO) nonreciprocal phase shift (NRPS) of an MO thin film cladding on silicon waveguides. Finite element method (FEM) simulation based on coupled mode theory is applied to calculate the performance of the isolator. An isolator with isolation ratio of 25.8 dB, 20 dB bandwidth of 1.6 nm and insertion loss of 5.4 dB, considering all material and junction losses can be achieved in the proposed device at around 1550 nm wavelength.","PeriodicalId":416565,"journal":{"name":"2016 IEEE International Nanoelectronics Conference (INEC)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Multimode interference isolator on Silicon-on-Insulator platform\",\"authors\":\"Keyi Shui, L. Deng, L. Bi\",\"doi\":\"10.1109/INEC.2016.7589288\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the design of a multimode interference(MMI) based optical isolator on Silicon-On-Insulator (SOI) structure, by using the magneto-optical (MO) nonreciprocal phase shift (NRPS) of an MO thin film cladding on silicon waveguides. Finite element method (FEM) simulation based on coupled mode theory is applied to calculate the performance of the isolator. An isolator with isolation ratio of 25.8 dB, 20 dB bandwidth of 1.6 nm and insertion loss of 5.4 dB, considering all material and junction losses can be achieved in the proposed device at around 1550 nm wavelength.\",\"PeriodicalId\":416565,\"journal\":{\"name\":\"2016 IEEE International Nanoelectronics Conference (INEC)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Nanoelectronics Conference (INEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/INEC.2016.7589288\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Nanoelectronics Conference (INEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/INEC.2016.7589288","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Multimode interference isolator on Silicon-on-Insulator platform
This paper presents the design of a multimode interference(MMI) based optical isolator on Silicon-On-Insulator (SOI) structure, by using the magneto-optical (MO) nonreciprocal phase shift (NRPS) of an MO thin film cladding on silicon waveguides. Finite element method (FEM) simulation based on coupled mode theory is applied to calculate the performance of the isolator. An isolator with isolation ratio of 25.8 dB, 20 dB bandwidth of 1.6 nm and insertion loss of 5.4 dB, considering all material and junction losses can be achieved in the proposed device at around 1550 nm wavelength.
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