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2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)最新文献

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An ESD-protection-free monolithic harmonic filter for WLAN applications 用于WLAN应用的无esd保护单片谐波滤波器
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422971
Jingfeng Ding, A. Springer, Thomas Bartl, G. Hueber, R. Hagelauer
{"title":"An ESD-protection-free monolithic harmonic filter for WLAN applications","authors":"Jingfeng Ding, A. Springer, Thomas Bartl, G. Hueber, R. Hagelauer","doi":"10.1109/SMIC.2010.5422971","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422971","url":null,"abstract":"Modern multi-band and multi-mode handheld wireless devices require novel approaches for the integration of passive elements into the radio front-end. In this paper, we present the design of an electrostatic discharge (ESD)-protection-free harmonic filter using an improved high-resistivity silicon copper technology for the monolithic integration of active and passive devices. Typical metal-isolator-metal (MIM) capacitors are replaced by inter-digital metal capacitors which provide a high breakdown voltage of up to 800 V. As the machine-mode ESD voltage is lower than 500 V, this filter can operate without ESD protection. In this design, electromagnetic (EM) simulation was used extensively for inductor and filter optimization. The fabricated device has an insertion loss of less than 0.3 dB and 2nd and 3rd harmonic attenuations of more than 30 dB for the WLAN 2.4 GHz frequency band and features a size of 0.75×0.67 mm2.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123716422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Millimeter-wave design in silicon technologies 硅技术中的毫米波设计
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422989
D. Belot
{"title":"Millimeter-wave design in silicon technologies","authors":"D. Belot","doi":"10.1109/SMIC.2010.5422989","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422989","url":null,"abstract":"this paper presents the different aspects of the design in silicon from the applications to the implementations in silicon technologies. The mmW technology features of advanced CMOS and BiCMOS will be discussed and their potentialities for different mmW applications will be presented. A comparison of the different design techniques in such technologies will be exposed before conclusions which summarize the advantages and drawbacks of using silicon technologies.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"365 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122833156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Filter technologies for converged RF-frontend architectures: SAW, BAW and beyond 用于融合射频前端架构的滤波器技术:SAW、BAW等
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422990
R. Aigner
{"title":"Filter technologies for converged RF-frontend architectures: SAW, BAW and beyond","authors":"R. Aigner","doi":"10.1109/SMIC.2010.5422990","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422990","url":null,"abstract":"Multi-band/multi-system mobile phones require a complex RF-frontend architecture. Complexity has increased to a point where adding switches and whole signal branches for an additional band is no longer cost effective. Alternative concepts involve ‘converged’ power amplifiers and switching concepts supporting those. Filters and duplexers play a key role in converged architectures and their requirements will be reviewed. Challenges that arise from combining filter functions for different wireless standards will be pointed out. Existing RF-filter technologies are based on high-Q acoustic resonators realized either in Surface Acoustic Wave (SAW) or Bulk-Acoustic-Wave (BAW) technology and do not allow changing the frequency characteristics on the fly. Concepts for tunable RF-filters - pursuing the ‘holy grail’ - will be discussed and an overview on the status of this matter will be presented.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129100134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
Charging and discharging studies in microwave capacitive switches under high field pulse discharges 微波电容开关在高场脉冲放电条件下的充放电研究
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422844
J. Jinyu Ruan, G. Papaioannou, N. Nolhier, D. Trémouilles, F. Coccetti, R. Plana
{"title":"Charging and discharging studies in microwave capacitive switches under high field pulse discharges","authors":"J. Jinyu Ruan, G. Papaioannou, N. Nolhier, D. Trémouilles, F. Coccetti, R. Plana","doi":"10.1109/SMIC.2010.5422844","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422844","url":null,"abstract":"This paper investigates the impact of pulse induced charging on RF-MEMS capacitive switches. The main goal here is to better understand the charging and discharging process involved in high field discharges. This is a necessary study for the reason that the reliability of the structure is directly affected by the underlying charging/discharging processes. Electrostatic discharge (ESD) experiments were carried out using a transmission-line-pulsing technique and compared with a human-body-model testing method. The tests were done on a test-vehicle design of a W-band capacitive RF-MEMS switch. Base on capacitance vs. voltage measurements we highlight the importance of the dielectric material properties and its impact on the device immunity with respect to pulse induced failure mechanisms.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121312641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low phase noise 18 kHz frequency tuning step 5 GHz DCO using tiny capacitors based on transmissi on lines 低相位噪声18 kHz频率调谐步5 GHz DCO使用基于传输线的微型电容器
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422841
R. Pokharel, K. Uchida, A. Tomar, H. Kanaya, K. Yoshida
{"title":"Low phase noise 18 kHz frequency tuning step 5 GHz DCO using tiny capacitors based on transmissi on lines","authors":"R. Pokharel, K. Uchida, A. Tomar, H. Kanaya, K. Yoshida","doi":"10.1109/SMIC.2010.5422841","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422841","url":null,"abstract":"We proposed a method to realize the fine frequency-tuning step using tiny capacitors instead of MIM capacitors for a digitally controlled oscillator (DCO). The tiny capacitors are realized by the coplanar transmission lines in a 6 metal layers (M6) foundry of 0.18 um CMOS technology. These transmission line based capacitors are designed by using electro-magnetic field simulator, and co-designed by using SPICE simulator. Finally, we fabricated the proposed DCO in 0.18 um CMOS technology, and tested. The measured phase noise of DCO was −118.3 dBc/Hz (@1MHz offset frequency), and the oscillating frequency tuned from 4.86 GHz to 5.36 GHz in the minimum frequency-tuning step of 18 kHz.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121074380","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
On the modeling of dielectric charging in RF-MEMS capacitive switches RF-MEMS电容开关介质充电建模研究
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422970
G. Papaioannou, F. Coccetti, R. Plana
{"title":"On the modeling of dielectric charging in RF-MEMS capacitive switches","authors":"G. Papaioannou, F. Coccetti, R. Plana","doi":"10.1109/SMIC.2010.5422970","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422970","url":null,"abstract":"The dielectric charging in RF MEMS capacitive switches is modeled. The modeling focus on charge injections processes and the calculations start from first principles. The calculations were performed on materials with uniform and exponential distribution of defects. The time and bias dependence of distribution of injected charges are derived. The dielectric charging/polarization build-up is derived and found to obey the stretched exponential law, a result being supported by experimental data in various dielectrics.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121387365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 37
Zero level metal thin film package for RF MEMS 用于射频MEMS的零电平金属薄膜封装
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422957
F. Barrière, A. Crunteanu, A. Bessaudou, A. Pothier, F. Cosset, D. Mardivirin, P. Blondy
{"title":"Zero level metal thin film package for RF MEMS","authors":"F. Barrière, A. Crunteanu, A. Bessaudou, A. Pothier, F. Cosset, D. Mardivirin, P. Blondy","doi":"10.1109/SMIC.2010.5422957","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422957","url":null,"abstract":"Because they have moving parts, and they need to work in a specific atmosphere (vacuum, inert gas…), micro-electromechanical system (MEMS) are not compatible with integrated circuit packaging technologies. So, in order to accelerate commercialization of RF MEMS devices, the development of packaging technologies is one of the most critical issues that should be solved. A process has been developed to effectively package RF MEMS switches using a technique called wafer level thin film micro encapsulation. This technology is designed to be compatible with high performance RF MEMS ohmic switch fabrication.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126414510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Silicon substrate integration of BST based tunable TFBARs using all-dielectric SiO2/AlN Bragg reflectors 使用全介质SiO2/AlN Bragg反射器的基于BST的可调谐tfbar的硅衬底集成
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422942
A. Vorobiev, J. Berge, M. Norling, S. Gevorgian
{"title":"Silicon substrate integration of BST based tunable TFBARs using all-dielectric SiO2/AlN Bragg reflectors","authors":"A. Vorobiev, J. Berge, M. Norling, S. Gevorgian","doi":"10.1109/SMIC.2010.5422942","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422942","url":null,"abstract":"Integration possibilities of Ba<inf>x</inf>Sr<inf>1-x</inf>TiO<inf>3</inf> (BST) based tunable Thin Film Bulk Acoustic Wave Resonators (TFBAR) using all-dielectric SiO<inf>2</inf>/AlN Bragg reflectors deposited on a high resistivity silicon strate are considered. SiO<inf>2</inf>/AlN reflectors withstand the high deposition temperature (≫600C) of the BST films opening up possibilities for heterogeneous integration of complex microwave circuits.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"1097 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133536785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A SiGe frequency quadrupler for M-QAM carrier recovery 用于M-QAM载波恢复的SiGe频率四倍器
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422848
A. Ulusoy, Gang Liu, A. Trasser, H. Schumacher
{"title":"A SiGe frequency quadrupler for M-QAM carrier recovery","authors":"A. Ulusoy, Gang Liu, A. Trasser, H. Schumacher","doi":"10.1109/SMIC.2010.5422848","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422848","url":null,"abstract":"In this paper a frequency quadrupler circuit, integrated with a commercially available SiGe HBT technology (fT/fmax¿80/90 GHz) is presented. The quadrupler consists of two Gilbert cell mixers stacked as squarers. The measured maximum conversion gain is 0.6 dB for an input level of -9 dBm. The circuit is optimized for M-QAM carrier recovery, and the performance was tested by applying QPSK and 16QAM modulated signals with 4 Gbit/s data rate at the input. Both experimental and simulated results are presented. The fully integrated chip is operated from a single 2.5V DC supply and draws 22.3 mA current.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131209475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A new and simple measurement approach for characterizing intermodulation distortion without using a spectrum analyzer 一种新的和简单的测量方法来表征互调失真而不使用频谱分析仪
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422963
A. Madan, T. Thrivikraman, S. Seth, R. Verma, J. Poh, J. Cressler
{"title":"A new and simple measurement approach for characterizing intermodulation distortion without using a spectrum analyzer","authors":"A. Madan, T. Thrivikraman, S. Seth, R. Verma, J. Poh, J. Cressler","doi":"10.1109/SMIC.2010.5422963","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422963","url":null,"abstract":"This paper presents a novel test setup for characterizing intermodulation distortion in advanced devices and circuits. The setup uses a network analyzer to measure power levels of the fundamental and IM3 products for a two-tone input. It is shown that if the power calibration is correctly performed, the intermodulation distortion terms from a power sweep give the correct value of the input-referred third-order intercept point (IIP3). MOSFETs in a commercially-available 0.13 µm SiGe BiCMOS technology were measured across bias to validate the measurement approach. The results were subsequently validated using harmonic balance simulations based on design-kit compact models.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131077542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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