Charging and discharging studies in microwave capacitive switches under high field pulse discharges

J. Jinyu Ruan, G. Papaioannou, N. Nolhier, D. Trémouilles, F. Coccetti, R. Plana
{"title":"Charging and discharging studies in microwave capacitive switches under high field pulse discharges","authors":"J. Jinyu Ruan, G. Papaioannou, N. Nolhier, D. Trémouilles, F. Coccetti, R. Plana","doi":"10.1109/SMIC.2010.5422844","DOIUrl":null,"url":null,"abstract":"This paper investigates the impact of pulse induced charging on RF-MEMS capacitive switches. The main goal here is to better understand the charging and discharging process involved in high field discharges. This is a necessary study for the reason that the reliability of the structure is directly affected by the underlying charging/discharging processes. Electrostatic discharge (ESD) experiments were carried out using a transmission-line-pulsing technique and compared with a human-body-model testing method. The tests were done on a test-vehicle design of a W-band capacitive RF-MEMS switch. Base on capacitance vs. voltage measurements we highlight the importance of the dielectric material properties and its impact on the device immunity with respect to pulse induced failure mechanisms.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2010.5422844","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

This paper investigates the impact of pulse induced charging on RF-MEMS capacitive switches. The main goal here is to better understand the charging and discharging process involved in high field discharges. This is a necessary study for the reason that the reliability of the structure is directly affected by the underlying charging/discharging processes. Electrostatic discharge (ESD) experiments were carried out using a transmission-line-pulsing technique and compared with a human-body-model testing method. The tests were done on a test-vehicle design of a W-band capacitive RF-MEMS switch. Base on capacitance vs. voltage measurements we highlight the importance of the dielectric material properties and its impact on the device immunity with respect to pulse induced failure mechanisms.
微波电容开关在高场脉冲放电条件下的充放电研究
研究了脉冲感应充电对RF-MEMS电容开关的影响。这里的主要目标是更好地理解高场放电的充放电过程。这是一项必要的研究,因为结构的可靠性直接受到底层充放电过程的影响。采用传输线脉冲技术进行了静电放电实验,并与人体模型实验方法进行了比较。在w波段电容式RF-MEMS开关试验车上进行了试验设计。基于电容与电压的测量,我们强调了介电材料特性的重要性及其对脉冲诱导失效机制的器件抗扰度的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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