硅技术中的毫米波设计

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI:10.1109/SMIC.2010.5422989

D. Belot

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引用次数: 13

摘要

本文介绍了基于硅的设计从应用到实现的各个方面。讨论了先进CMOS和BiCMOS的毫米波技术特点，并介绍了它们在不同毫米波应用中的潜力。在总结使用硅技术的优点和缺点之前，将对这些技术中的不同设计技术进行比较。

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Millimeter-wave design in silicon technologies

this paper presents the different aspects of the design in silicon from the applications to the implementations in silicon technologies. The mmW technology features of advanced CMOS and BiCMOS will be discussed and their potentialities for different mmW applications will be presented. A comparison of the different design techniques in such technologies will be exposed before conclusions which summarize the advantages and drawbacks of using silicon technologies.

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来源期刊

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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