使用全介质SiO2/AlN Bragg反射器的基于BST的可调谐tfbar的硅衬底集成

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI:10.1109/SMIC.2010.5422942

A. Vorobiev, J. Berge, M. Norling, S. Gevorgian

{"title":"使用全介质SiO2/AlN Bragg反射器的基于BST的可调谐tfbar的硅衬底集成","authors":"A. Vorobiev, J. Berge, M. Norling, S. Gevorgian","doi":"10.1109/SMIC.2010.5422942","DOIUrl":null,"url":null,"abstract":"Integration possibilities of Ba<inf>x</inf>Sr<inf>1-x</inf>TiO<inf>3</inf> (BST) based tunable Thin Film Bulk Acoustic Wave Resonators (TFBAR) using all-dielectric SiO<inf>2</inf>/AlN Bragg reflectors deposited on a high resistivity silicon strate are considered. SiO<inf>2</inf>/AlN reflectors withstand the high deposition temperature (≫600C) of the BST films opening up possibilities for heterogeneous integration of complex microwave circuits.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"1097 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Silicon substrate integration of BST based tunable TFBARs using all-dielectric SiO2/AlN Bragg reflectors\",\"authors\":\"A. Vorobiev, J. Berge, M. Norling, S. Gevorgian\",\"doi\":\"10.1109/SMIC.2010.5422942\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Integration possibilities of Ba<inf>x</inf>Sr<inf>1-x</inf>TiO<inf>3</inf> (BST) based tunable Thin Film Bulk Acoustic Wave Resonators (TFBAR) using all-dielectric SiO<inf>2</inf>/AlN Bragg reflectors deposited on a high resistivity silicon strate are considered. SiO<inf>2</inf>/AlN reflectors withstand the high deposition temperature (≫600C) of the BST films opening up possibilities for heterogeneous integration of complex microwave circuits.\",\"PeriodicalId\":404957,\"journal\":{\"name\":\"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"volume\":\"1097 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2010.5422942\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2010.5422942","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

考虑了在高电阻率硅衬底上沉积全介质SiO2/AlN Bragg反射器的基于BaxSr1-xTiO3 (BST)的可调谐薄膜体声波谐振器(TFBAR)的集成可能性。SiO2/AlN反射镜可以承受BST薄膜的高沉积温度(> 600C)，为复杂微波电路的非均质集成开辟了可能性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Silicon substrate integration of BST based tunable TFBARs using all-dielectric SiO2/AlN Bragg reflectors

Integration possibilities of BaxSr1-xTiO3 (BST) based tunable Thin Film Bulk Acoustic Wave Resonators (TFBAR) using all-dielectric SiO2/AlN Bragg reflectors deposited on a high resistivity silicon strate are considered. SiO2/AlN reflectors withstand the high deposition temperature (≫600C) of the BST films opening up possibilities for heterogeneous integration of complex microwave circuits.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

自引率

0.00%

发文量