A. Madan, T. Thrivikraman, S. Seth, R. Verma, J. Poh, J. Cressler
{"title":"一种新的和简单的测量方法来表征互调失真而不使用频谱分析仪","authors":"A. Madan, T. Thrivikraman, S. Seth, R. Verma, J. Poh, J. Cressler","doi":"10.1109/SMIC.2010.5422963","DOIUrl":null,"url":null,"abstract":"This paper presents a novel test setup for characterizing intermodulation distortion in advanced devices and circuits. The setup uses a network analyzer to measure power levels of the fundamental and IM3 products for a two-tone input. It is shown that if the power calibration is correctly performed, the intermodulation distortion terms from a power sweep give the correct value of the input-referred third-order intercept point (IIP3). MOSFETs in a commercially-available 0.13 µm SiGe BiCMOS technology were measured across bias to validate the measurement approach. The results were subsequently validated using harmonic balance simulations based on design-kit compact models.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A new and simple measurement approach for characterizing intermodulation distortion without using a spectrum analyzer\",\"authors\":\"A. Madan, T. Thrivikraman, S. Seth, R. Verma, J. Poh, J. Cressler\",\"doi\":\"10.1109/SMIC.2010.5422963\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a novel test setup for characterizing intermodulation distortion in advanced devices and circuits. The setup uses a network analyzer to measure power levels of the fundamental and IM3 products for a two-tone input. It is shown that if the power calibration is correctly performed, the intermodulation distortion terms from a power sweep give the correct value of the input-referred third-order intercept point (IIP3). MOSFETs in a commercially-available 0.13 µm SiGe BiCMOS technology were measured across bias to validate the measurement approach. The results were subsequently validated using harmonic balance simulations based on design-kit compact models.\",\"PeriodicalId\":404957,\"journal\":{\"name\":\"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2010.5422963\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2010.5422963","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
摘要
本文提出了一种新的测试装置,用于表征先进器件和电路中的互调失真。该设置使用网络分析仪来测量双音输入的基波和IM3产品的功率水平。结果表明,如果正确执行功率校准,功率扫描的互调失真项给出输入参考的三阶截距点(IIP3)的正确值。采用商用0.13 μ m SiGe BiCMOS技术的mosfet进行了跨偏置测量,以验证测量方法。结果随后使用基于design-kit紧凑模型的谐波平衡模拟进行验证。
A new and simple measurement approach for characterizing intermodulation distortion without using a spectrum analyzer
This paper presents a novel test setup for characterizing intermodulation distortion in advanced devices and circuits. The setup uses a network analyzer to measure power levels of the fundamental and IM3 products for a two-tone input. It is shown that if the power calibration is correctly performed, the intermodulation distortion terms from a power sweep give the correct value of the input-referred third-order intercept point (IIP3). MOSFETs in a commercially-available 0.13 µm SiGe BiCMOS technology were measured across bias to validate the measurement approach. The results were subsequently validated using harmonic balance simulations based on design-kit compact models.