用于射频MEMS的零电平金属薄膜封装

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI:10.1109/SMIC.2010.5422957

F. Barrière, A. Crunteanu, A. Bessaudou, A. Pothier, F. Cosset, D. Mardivirin, P. Blondy

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引用次数: 13

摘要

由于微机电系统(MEMS)具有活动部件，并且需要在特定的气氛(真空，惰性气体……)中工作，因此与集成电路封装技术不兼容。因此，为了加速RF MEMS器件的商业化，封装技术的发展是应该解决的最关键问题之一。已经开发了一种有效封装RF MEMS开关的工艺，使用称为晶圆级薄膜微封装的技术。该技术旨在与高性能RF MEMS欧姆开关制造兼容。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Zero level metal thin film package for RF MEMS

Because they have moving parts, and they need to work in a specific atmosphere (vacuum, inert gas…), micro-electromechanical system (MEMS) are not compatible with integrated circuit packaging technologies. So, in order to accelerate commercialization of RF MEMS devices, the development of packaging technologies is one of the most critical issues that should be solved. A process has been developed to effectively package RF MEMS switches using a technique called wafer level thin film micro encapsulation. This technology is designed to be compatible with high performance RF MEMS ohmic switch fabrication.

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2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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