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2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)最新文献

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A plastic packaged Ku-band LNB with very high susceptibility to supply PLL in 0.18um CMOS 一种塑料封装的ku波段LNB，在0.18um CMOS中具有非常高的电源锁相环敏感性
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422974
K. Miyashita
{"title":"A plastic packaged Ku-band LNB with very high susceptibility to supply PLL in 0.18um CMOS","authors":"K. Miyashita","doi":"10.1109/SMIC.2010.5422974","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422974","url":null,"abstract":"This paper presents a Ku-band low-noise block that includes very high susceptibility to power supply PLL in a 0.18um CMOS technology. The front-end down-converts the input signal from the Ku-band (10.5∼13GHz) to the IF (∼2.3GHz). The fully integrated LNB is dedicated to both satellite receivers and microwave link products. The VCO that includes full differential varactor shows a very low supply sensitivity (Kpss=−0.18[%/V]) that can eliminates on chip voltage regulator. The LNB performances include 28.2dB gain, −20.5dBm IIP3, 3.4dB NF, and −107dBc/Hz phase noise at 1MHz offset. The front-end consumes 364mW from a 1.8V supply. The core size is about 0.95×2.3 [mm2].","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129711122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
RF MEMS phase shifters for 24 and 77 GHz on high resistivity silicon 24和77 GHz的高电阻硅射频MEMS移相器
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422951
T. Buck, E. Kasper
{"title":"RF MEMS phase shifters for 24 and 77 GHz on high resistivity silicon","authors":"T. Buck, E. Kasper","doi":"10.1109/SMIC.2010.5422951","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422951","url":null,"abstract":"Beam steering is a common technique within radar applications to scan for objects within a small dihedral angle. A flexible approach to achieve this uses variable phase shifters in front of each single antenna in an array. This paper presents delay line phase shifters for two common radar frequencies in the K and W-band of 24 and 77GHz. The active components are capacitive RF MEMS switches. These were fabricated on high resistivity silicon using metal thin film technologies. The performance of the phase shifters, especially the insertion losses of around 2.3 and 3 dB can compete with diode switched setups on other RF substrates.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115986756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Advanced methods for silicon device modeling 硅器件建模的先进方法
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422994
Umberto Ravaioli
{"title":"Advanced methods for silicon device modeling","authors":"Umberto Ravaioli","doi":"10.1109/SMIC.2010.5422994","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422994","url":null,"abstract":"The sustained development of digital electronics has driven for many years the advances of silicon device simulation. However, fundamental simulation issues that must be addressed in modern digital devices are also quite relevant for high frequency applications. Quantum effects must be considered in the simulation of aggressively scaled structures, while thermal effects are particular relevant for power applications. Conventional simulation approaches based on the standard semiconductor equations, although computationally efficient, do not always provide a sufficiently predictive model. More advanced physical approaches rely on an extended Boltzmann equation model that can include explicitly the detailed band structure, nonlinear transport effects, quantum corrections and a self-consistent treatment for self-heating and phonon transport. Such complicated physical models are more easily implemented in particle Monte Carlo simulation.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115668798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of Ku-band SIR interdigital bandpass filter using silicon-based micromachining technology 基于硅基微加工技术的ku波段SIR数字间带通滤波器设计
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422969
Sheng-Chi Hsieh, Chia-Chan Chang, Yi-Ming Chen, Chun-Chi Lin, Sheng-Fuh Chang
{"title":"Design of Ku-band SIR interdigital bandpass filter using silicon-based micromachining technology","authors":"Sheng-Chi Hsieh, Chia-Chan Chang, Yi-Ming Chen, Chun-Chi Lin, Sheng-Fuh Chang","doi":"10.1109/SMIC.2010.5422969","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422969","url":null,"abstract":"This paper presents design, fabrication, and measurement of a Ku-band micromachined bandpass filter. The fourth-order interdigital filterd based on step-impedance resonators (SIRs) is fabricated and self-packaged by three high-resistivity(≫ 10KΩcm) silicon wafers to achieve compactness and low loss. The proposed circuit is designed to produce a passband of 21% centered at 14.2 GHz. Experimental results exhibit that the insertion loss is 2.3dB and the return loss is better than 20 dB within passband. The fabrication technology can be applied for other micromachined devices.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130168999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 30 to 44 GHz divide-by-2, quadrature, direct injection locked frequency divider for sliding-IF 60 GHz transceivers 用于滑动中频60 GHz收发器的30至44 GHz / 2正交直接注入锁定分频器
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422946
H. M. Cheema, R. Mahmoudi, A. V. van Roermund
{"title":"A 30 to 44 GHz divide-by-2, quadrature, direct injection locked frequency divider for sliding-IF 60 GHz transceivers","authors":"H. M. Cheema, R. Mahmoudi, A. V. van Roermund","doi":"10.1109/SMIC.2010.5422946","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422946","url":null,"abstract":"This paper presents a wideband 40 GHz divide-by-2 quadrature injection locked frequency divider (Q-ILFD) as an enabling component for sliding-IF 60 GHz transceivers. The design incorporates direct injection topology and input power matching using interconnect inductances to enhance injection efficiency. This results in an excellent input sensitivity and a wide locking range. Fabricated in a 65nm bulk CMOS technology, the divider operates from 30.3 to 44 GHz (37% locking range) while consuming 9mW from a 1.2V supply. The measured phase noise is −131 dBc/Hz at 1-MHz offset whereas the phase error between I-Q outputs is less than 1.44°.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133887476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Accurate electromagnetic simulation and measurement of millimeter-wave inductors in bulk CMOS technology 毫米波电感体CMOS技术的精确电磁仿真与测量
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422948
M. Kraemer, D. Dragomirescu, R. Plana
{"title":"Accurate electromagnetic simulation and measurement of millimeter-wave inductors in bulk CMOS technology","authors":"M. Kraemer, D. Dragomirescu, R. Plana","doi":"10.1109/SMIC.2010.5422948","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422948","url":null,"abstract":"In radio frequency integrated circuits (RFICs) that use a low resistivity silicon substrate, spiral inductors show advantages in performance and size with respect to transmission lines, even at millimeter-waves (mm-waves). Design guidelines to create mm-wave inductors and equivalent circuit models describing them exist in literature. However, these models need to be parametrized either from test-structure measurement or electromagnetic (EM) simulations. This paper complements previous work by discussing problems that arise when trying to accurately determine the spiral's parameters as inductance and quality factor. Firstly, it provides guidelines for obtaining accurate and consistent results using different kinds of EM simulators. Secondly, the issue of accurately measuring the fabricated inductors by de-embedding test structure parasitics is discussed. The results obtained from measurements are compared to the simulation results of an inductor test structure, confirming the validity of the considerations before.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"225 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121271484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 38
RF power potential of 45 nm CMOS technology 45纳米CMOS技术的射频功率潜力
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422960
U. Gogineni, Jesus A. del Alamo, Christopher S. Putnam
{"title":"RF power potential of 45 nm CMOS technology","authors":"U. Gogineni, Jesus A. del Alamo, Christopher S. Putnam","doi":"10.1109/SMIC.2010.5422960","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422960","url":null,"abstract":"This paper presents the first measurements of the RF power performance of 45 nm CMOS devices with varying device widths and layouts. We find that 45 nm CMOS can deliver a peak output power density of around 140 mW/mm with a peak power-added efficiency (PAE) of 70% at 1.1 V. The PAE and Pout decrease with increasing device width because of a decrease in the maximum oscillation frequency (fmax) for large width devices. The PAE also decreases with increasing frequency because of a decrease in gain as the operating frequency approaches fmax. The RF power performance of 45 nm devices is shown to be very similar to that of 65 nm devices.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123373585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 30
New millimeter wave packaged antenna array on IPD technology 基于IPD技术的新型毫米波封装天线阵列
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422965
C. Calvez, C. Person, J. Coupez, F. Gallée, H. Ezzeddine, A. Cathelin, D. Belot
{"title":"New millimeter wave packaged antenna array on IPD technology","authors":"C. Calvez, C. Person, J. Coupez, F. Gallée, H. Ezzeddine, A. Cathelin, D. Belot","doi":"10.1109/SMIC.2010.5422965","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422965","url":null,"abstract":"In the millimeter wave (mmWave) frequency range, the recent advances in CMOS and BiCMOS technologies make possible the integration of entire RF front-ends on the same chip (System on Chip (SoC) approach). The present challenge concerns the antenna integration within the packaging (System in Package (SiP) approach) which will support the complete analog and digital system. Integrated antennas on silicon cannot exhibit gain performances greater than 7 dBi, typically, (14 dBi as currently expected by future normalized IEEE-802.15.3c Usage Models (UM1 to UM5)). In this paper, we propose a novel antenna array combining Glass/Silicon technologies, suitable for mmWave integrated packaging and achieving the required 14 dBi gain values for applications such as Wireless HDMI (High-Definition Multimedia Interface) downloading applications.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131652404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Fast hopping carrier generation for 14-band multi-band OFDM UWB in digital CMOS 数字CMOS中14波段多频带OFDM UWB的快速跳频载波生成
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422972
M. Farazian, P. Gudem, L. Larson
{"title":"Fast hopping carrier generation for 14-band multi-band OFDM UWB in digital CMOS","authors":"M. Farazian, P. Gudem, L. Larson","doi":"10.1109/SMIC.2010.5422972","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422972","url":null,"abstract":"A 14-band frequency synthesizer for MB-OFDM UWB using an inductor-less design methodology is presented. It is capable of frequency switching across the entire UWB band in approximately 2 nS, and the phase noise is less than −114 dBc/Hz at 1 MHz offset. Implemented in a 0.13µm CMOS technology, the synthesizer dissipates 135 mW from a 1.2 V supply, and occupies only 1.3 mm2 of silicon area.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"162 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114048904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Impulse generator targeting the European UWB mask 脉冲发生器瞄准欧洲超宽带掩码
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422846
B. Schleicher, H. Schumacher
{"title":"Impulse generator targeting the European UWB mask","authors":"B. Schleicher, H. Schumacher","doi":"10.1109/SMIC.2010.5422846","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422846","url":null,"abstract":"This paper presents a monolithic impulse generator IC targeting the spectral mask for ultra-wideband applications allocated in the European Union. The multicycle impulse is based on a spike triggered resonant circuit and has a peak to peak output amplitude of 32mV and a time domain extension of 0.83 ns (full width at half maximum). It can generate single pulses as well as repetition rates exceeding the 200MHz shown in this paper. The IC includes a conversion stage, which can generate the triggering spike from a low slew rate signal. The IC is fabricated in a Si/SiGe HBT production technology, has a power consumption of 58.6mW at 200MHz repetition rate and an on-chip area of 480 × 880µm2, both including the conversion stage. Based on the time domain measurement a model of the impulse transient for the use in system simulations is also presented. The modell equation applies a summation of two Gaussian bell shapes as the envelope function, which is multiplied with a phase-corrected sinusoidal waveform to arrive at the final shape.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115210103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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