{"title":"Fast hopping carrier generation for 14-band multi-band OFDM UWB in digital CMOS","authors":"M. Farazian, P. Gudem, L. Larson","doi":"10.1109/SMIC.2010.5422972","DOIUrl":null,"url":null,"abstract":"A 14-band frequency synthesizer for MB-OFDM UWB using an inductor-less design methodology is presented. It is capable of frequency switching across the entire UWB band in approximately 2 nS, and the phase noise is less than −114 dBc/Hz at 1 MHz offset. Implemented in a 0.13µm CMOS technology, the synthesizer dissipates 135 mW from a 1.2 V supply, and occupies only 1.3 mm2 of silicon area.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"162 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2010.5422972","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A 14-band frequency synthesizer for MB-OFDM UWB using an inductor-less design methodology is presented. It is capable of frequency switching across the entire UWB band in approximately 2 nS, and the phase noise is less than −114 dBc/Hz at 1 MHz offset. Implemented in a 0.13µm CMOS technology, the synthesizer dissipates 135 mW from a 1.2 V supply, and occupies only 1.3 mm2 of silicon area.